The invention discloses a fabrication method of a
quantum dot lens-type direct LED backlight source. The method comprises the following steps of firstly preparing a fluorescent
adhesive A and dropping the fluorescent
adhesive A into an LED bracket; preparing a
quantum dot fluorescent
adhesive B and
coating the surface of an LED lens with the
quantum dot fluorescent adhesive B and then
coating the surface of the
quantum dot fluorescent adhesive B with an
ultraviolet-curing adhesive
protection layer. A
quantum dot fluorescent material is adopted by the
quantum dot fluorescent adhesive B and the half-wave width is small, so that the color
gamut value of the LED backlight source can be greatly improved and the color
gamut value can reach over 96% of
NTSC.
Quantum dot fluorescent
powder is prepared in the fluorescent adhesives, so that the problem of agglomeration and failure of the quantum dot fluorescent
powder is solved. The fabrication method is simple in process and low in cost, and industrial production is easy to implement. Meanwhile, the quantum dot fluorescent adhesive B coats the LED lens, and is coated with packaging glue for protection, so that
erosion of
moisture and
oxygen to the quantum dot fluorescent material is reduced, meanwhile, the quantum dot fluorescent material is prevented from being in direct contact with a light-emitting
chip and being affected by a high temperature of the light-emitting
chip, and the reliability of a lamp bead is improved.