Manufacturing method of direct-light-type LED backlight

A technology for an LED backlight source and a manufacturing method, which is applied to electrical components, electric solid-state devices, circuits, etc., can solve the problems of low light conversion efficiency, high production cost, and complicated manufacturing process of quantum dot light-emitting devices, and achieve high light conversion efficiency. , the effect of high excitation efficiency and low production cost

Inactive Publication Date: 2017-05-31
HUIZHOU JUFEI OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For this reason, the technical problem to be solved by the present invention lies in that the quantum dot light-emitting devices in the prior art have technical bottlenecks such as complex manufacturing proce

Method used

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  • Manufacturing method of direct-light-type LED backlight
  • Manufacturing method of direct-light-type LED backlight
  • Manufacturing method of direct-light-type LED backlight

Examples

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Example Embodiment

[0028] Example 1

[0029] The present embodiment provides a method for manufacturing a direct type LED backlight, the method comprising the following steps:

[0030] a. Weigh 0.02g of CdTe and ZnSe quantum dot phosphors with an emission wavelength of 620nm, of which the CdTe quantum dot phosphor is 0.01g, and weigh 0.013g of PbZrO with a peak emission wavelength of 545nm 3 For green light quantum dot phosphors, three kinds of quantum dot phosphors are uniformly mixed to obtain mixed phosphors, and the quantum dot phosphors are in powder form;

[0031] b. Weigh 9.9g of epoxy-based light-curing glue and add it to the mixed phosphor powder, then perform vacuum stirring, and stir evenly to obtain quantum dot fluorescent glue;

[0032] c. Coat the quantum dot fluorescent glue on the inner surface of the LED lens. In this embodiment, the coating thickness of the quantum dot fluorescent glue is 5 μm, and the LED lens is placed in an ultraviolet curing oven. Irradiate under 230nm ul...

Example Embodiment

[0036] Example 2

[0037] The present embodiment provides a method for manufacturing a direct type LED backlight, the method comprising the following steps:

[0038]a. Weigh 0.04g of red BaTiO with an emission wavelength of 628nm 3 Quantum dot phosphor, and weigh 0.012g of AgInS whose emission peak wavelength is 455nm 2 Blue quantum dot phosphors and 0.028g of GaS green quantum dot phosphors with an emission wavelength of 539nm, the three kinds of quantum dot phosphors are mixed uniformly to obtain mixed phosphors, and the quantum dot phosphors are in a solvent-dispersed state;

[0039] b. Weigh 0.08g of silicone-based light-curing glue and add it to the mixed fluorescent powder, then perform vacuum stirring, and stir evenly to obtain quantum dot fluorescent glue;

[0040] c. Coat the quantum dot fluorescent glue on the outer surface of the LED lens. In this embodiment, the coating thickness of the quantum dot fluorescent glue is 500 μm, and the LED lens is placed in an ultr...

Example Embodiment

[0044] Example 3

[0045] The present embodiment provides a method for manufacturing a direct type LED backlight, the method comprising the following steps:

[0046] a. Weigh 0.54g of fluoride red fluorescent powder with emission wavelength of 632nm, and weigh 0.012g of GaAs and GaN green quantum dot fluorescent powder with emission peak wavelength of 535nm, and mix the three kinds of fluorescent powders uniformly to obtain mixed fluorescence powder, the quantum dot phosphor is powder;

[0047] b. Weigh 1.31g of polyurethane-based light-curing glue and add it to the mixed phosphor powder, then perform vacuum stirring, and stir evenly to obtain quantum dot fluorescent glue;

[0048] c. Coat the quantum dot fluorescent glue on the outer surface of the LED lens. In this embodiment, the coating thickness of the quantum dot fluorescent glue is 180 μm, and the LED lens is placed in an ultraviolet curing oven. Irradiate under 365nm ultraviolet light for 50s to cure the quantum dot ...

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Abstract

The present invention discloses a manufacturing method of a direct-light-type LED backlight. The method comprises: mixing mixed phosphors including quantum dot fluorescent powder with photocuring glue to obtain quantum dot fluorescent glue, coating the quantum dot fluorescent glue at the surface of a LED lens in the LED backlight, and coating a photocuring glue protective layer at the surface of the fluorescent glue after the fluorescent glue is solidified. The manufacturing method of direct-light-type LED backlight is simple in manufacturing technology, and the half-wave width of the quantum dot fluorescent glue made of quantum dot materials is small so as to greatly improve the color gamut value of the LED backlight, the color gamut value of the direct-light-type LED backlight can reach above 97% of NTSC, and the light conversion efficiency of a light source obtained through the technology is high, and the production cost is low. The photocuring glue protective layer can effectively reduce the erosion of moisture and oxygen for the quantum dot materials, can prevent the quantum dot materials from directly contacting a luminous chip, and is not liable to high-temperature influence of the luminous chip so as to improve the reliability of the LED light source.

Description

technical field [0001] The invention belongs to the technical field of LED backlight sources, and relates to a method for manufacturing an LED backlight source, in particular to a method for manufacturing a direct-type LED backlight source. Background technique [0002] Compared with the traditional CCFL backlight, LED backlight has many advantages such as high color gamut, high brightness, long life, energy saving and environmental protection, real-time color controllable, etc., especially the high color gamut LED backlight makes TV, mobile phone, The screens of electronic products such as tablets have more vivid colors and a higher degree of color reproduction. [0003] Since the beginning of the 21st century, backlight technology has developed rapidly, and new technologies and products have been launched continuously. LED backlight has become the mainstream of the market. At present, the commonly used LED backlight usually adopts the form of blue light chip to excite YAG...

Claims

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Application Information

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IPC IPC(8): H01L33/50H01L33/54H01L33/58
CPCH01L2224/48091H01L2924/181H01L33/58H01L33/504H01L33/505H01L33/507H01L33/54H01L2933/0041H01L2933/005H01L2933/0058
Inventor 张志宽高丹鹏邢其彬周世官王旭改
Owner HUIZHOU JUFEI OPTOELECTRONICS CO LTD
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