A resistive random access memory

Abstract

The present invention provides a resistive random access memory comprising a first electrode layer; the resistive random layer is arranged below the first electrode layer; a first intermediate layer is arranged below the resistive random layer; the mobility of the first intermediate layer is less than 1 cm<2> / Vs; a second intermediate layer is arranged below the first intermediate layer; the materials of the second intermediate layer comprises two-dimensional materials; a second electrode layer is below the second intermediate layer; since the mobility of the first intermediate layer is lessthan 1 cm<2> / Vs, the diffusion speed of metal ions can be slowed down under the action of the electric field, so that a part of the metal ions remain in the first intermediate layer, and conductive thin wires do not completely break under the electric field, thereby reducing volatility of the resistive random access memory during setting or resetting. In setting, since the metal ions in the second electrode layer are easily accumulated in the conductive thin wires in the first intermediate layer and the second intermediate layer, the settling speed is increased; and in each setting process, the conductive thin wires are preferentially formed in the same place to lower the setting voltage.

Description

technical field [0001] The invention relates to the technical field of microelectronic devices, in particular to a resistive variable memory. Background technique [0002] With the rapid development of electronic technology and devices, people urgently need memories with higher storage speed and storage density, and resistive variable memory is one of the current choices. [0003] In the prior art, due to many reasons such as the random formation of conductive thin wires of the non-volatile RRAM, the memory characteristics of the RRAM are greatly weakened, thereby reducing the retention characteristics and stability of the resistive state. In addition, the high set voltage of the resistive variable memory in the prior art is not conducive to realizing the low power consumption characteristics of the device, and the low set speed is not conducive to the improvement of the storage speed of the device, which seriously restricts the resistive variable performance of the resistiv...

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Problems solved by technology

[0003] In the prior art, due to many reasons such as the random formation of conductive thin wires of the non-volatile resistive memory, the memory characteristics of the resistive memory are greatly weakened, and then Reduced retention characteristics and stability of the resistance state

In addition, the high set voltage of the resistive memory in the prior art is not conducive to the realization of low power consumption characteristics of the device, and the low set speed is not conducive to the improvement of the storage speed of the device, which seriously restricts the resistive performance of the resistive memory.

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