Manufacturing method of metal grid
A manufacturing method and metal gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as circuit short circuit, impact on product yield, etc., to avoid short circuit, eliminate metal residues, and improve product yield Effect
Active Publication Date: 2020-11-24
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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Problems solved by technology
This metal residue will cause a circuit short circuit when the metal plug is deposited after the contact hole is etched, directly impacting the product yield
Method used
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Embodiment Construction
[0048] Such as figure 2 Shown is the flowchart of the embodiment method of the present invention, Figure 3A to Figure 3F is a device structure diagram in each step of the method of the embodiment of the present invention, and the method for manufacturing the metal gate of the embodiment of the present invention includes the following steps:
[0049] Step 1, such as Figure 3A As shown, a semiconductor substrate 1 is provided, and a plurality of dummy gate structures are formed on the semiconductor substrate 1. The dummy gate structures are formed by stacking a gate dielectric layer 2 and a polysilicon gate 3. A silicon nitride sidewall 4 is formed on the side of the gate structure, and a contact etch stop layer 5 composed of a silicon nitride material covers the top surface of the polysilicon gate 3 and the silicon nitride sidewall of the polysilicon gate. 4 and the surface of the semiconductor substrate 1 outside the dummy gate structure.
[0050] In the method of the em...
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The invention discloses a manufacturing method of a metal gate. The manufacturing method comprises the following steps of 1, providing a semiconductor substrate forming a pseudo grid electrode structure, a silicon nitride side wall and a contact etching stop layer; 2, forming an interlayer film; 3, flattening the interlayer film by using a primary chemical mechanical grinding process, and forminga disc-shaped recessed structure on the surface of the interlayer film; 4, etching silicon nitride by a secondary etching process, and enabling the surface of the silicon nitride at the two sides of apolysilicon gate to be lower than the disc-shaped recessed structure; 5, eliminating the polysilicon gate; 6, filling a metal material layer corresponding to the metal grate; and 7, flattening the metal material layer by a secondary chemical mechanical grinding process, completely eliminating the metal material layer on the surface of the interlayer film by the secondary chemical mechanical grinding process; and enabling the metal material layer to be only filled in the polysilicon gate removal region for thus forming the metal grate. The metal residue of the chemical mechanical grinding process of the metal gate on the interlayer film can be eliminated.
Description
technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for manufacturing a metal gate. Background technique [0002] In the current advanced logic chip process, in order to increase the electrical performance of components, the original polysilicon gate is removed and replaced with metal. The process method used is metal chemical mechanical polishing. [0003] However, since the silicon oxide chemical mechanical polishing in the previous process will form dish-shaped (Dish) depressions on the top surface of the silicon oxide dielectric layer between the polysilicon gates, that is, the interlayer film, which may cause subsequent metal chemical mechanical polishing. Produces metal residues. This metal residue will cause a circuit short circuit when the metal plug is deposited after the contact hole is etched, directly impacting the product yield. Now explain as follows according to the accompan...
Claims
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IPC IPC(8): H01L21/28H01L21/321
CPCH01L21/28079H01L21/28114H01L21/3212
Inventor 李镇全
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD