Laser-assisted maskless high aspect ratio silicon carbide deep trench structure preparation method

Abstract

The present disclosure provides a laser-assisted maskless high aspect ratio silicon carbide deep trench structure preparation method. The method comprises the steps of: taking a silicon carbide material to be processed; performing laser irradiation for the silicon carbide material to be processed; and performing dry etching for the silicon carbide material after laser irradiation. The method provided by the invention solves the processing difficulty of the silicon carbide high aspect ratio deep trench structure, achieves maskless etching, is simple in process, improves the preparation efficiency and selectively repeats the laser irradiation and dry etching steps to meet higher demands for the silicon carbide trench depth.

Description

technical field [0001] The disclosure relates to the technical field of micro-nano processing, in particular to a method for preparing a laser-assisted maskless silicon carbide deep slot structure with a high aspect ratio. Background technique [0002] Silicon carbide material is a wide bandgap semiconductor with excellent performance, not only has a wide band gap (3 times that of Si), high thermal conductivity (3.3 times that of Si), high breakdown field strength (10 times that of Si), saturation It has the characteristics of high electron drift rate (2.5 times that of Si), and it also has excellent physical and chemical stability, strong anti-radiation ability and mechanical strength, etc. It has obvious applications in many fields such as power electronics and MEMS. Advantage. [0003] However, due to the stable physical and chemical properties of silicon carbide itself, its processing is relatively difficult, especially when it involves the processing of deep slot struc...

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Problems solved by technology

[0003] However, due to the stable physical and chemical properties of silicon carbide itself, its processing is relatively difficult, especially when it involves the processing of deep slot structures with large aspect ratios. When the structure is prepared by dry etching, it often faces Two outstanding problems: First, when etching silicon carbide, it is difficult to find a mask material with a high selectivity ratio. The etching selectivity ratio of conventional photoresist and silicon carbide is often less than 1. The etching selectivity ratio of silicon is also less than 20, and the selec

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