Metal-insulator-metal (MIM) capacitor structure

Abstract

A metal-insulator-metal (MIM) capacitor structure and a method for forming the same are provided. The MIM capacitor structure includes a substrate, a bottom electrode layer, a first dielectric layer,a top electrode layer and first dielectric spacers. The bottom electrode layer is positioned over the substrate. The first dielectric layer is positioned over the bottom electrode layer. The top electrode layer is positioned over the first dielectric layer. The first dielectric spacers are positioned on opposite sidewalls of the bottom electrode layer. The first dielectric layer has a first dielectric constant. The first dielectric spacers have a second dielectric constant that is lower than the first dielectric constant.

Description

technical field [0001] Embodiments of the present invention relate to the metal-insulator-metal capacitor structure, and more particularly relate to the dielectric constant and cross-sectional shape of the dielectric spacers. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. Technological advances in integrated circuit materials and design have resulted in each generation of integrated circuits being smaller and more complex than the previous generation. However, these advances will increase the complexity of the IC manufacturing process. In order to realize the above advantages, similar progress is required in the integrated circuit manufacturing process. As integrated circuits progress, functional density (eg, the number of interconnect devices in a given die area) generally increases as geometry size (eg, the smallest feature formed by a process) shrinks. [0003] One type of capacitor is the metal-insulator-metal...

AI Technical Summary

Problems solved by technology

While existing processes for forming metal-insulator-metal capacitors generally serve their

Images