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Lateral radiation-resistant power device structure

A power device and anti-radiation technology, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as electronic equipment failure, component performance damage, etc. Irradiation, the effect of simple and feasible process difficulty

Active Publication Date: 2019-05-07
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Electronic components that make up electronic equipment are inevitably exposed to strong radiation applications such as space radiation and nuclear radiation. Radiation effects will cause damage to the performance of components to varying degrees, and cause the entire electronic equipment to fail

Method used

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  • Lateral radiation-resistant power device structure
  • Lateral radiation-resistant power device structure
  • Lateral radiation-resistant power device structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Such as figure 1 As shown, a lateral radiation-resistant power device structure includes a semiconductor substrate 1 of the second conductivity type, and a semiconductor drift region 2 of the first conductivity type located on the upper surface of the semiconductor substrate 1 of the second conductivity type is formed on the first The second conductivity type semiconductor well region 3 in the conductivity type semiconductor drift region 2, the second conductivity type semiconductor contact region 4 and the first conductivity type semiconductor contact region 5 located above the interior of the second conductivity type semiconductor well region 3 , the right side of the semiconductor contact region 4 of the second conductivity type is in contact with the semiconductor contact region 5 of the first conductivity type, and the semiconductor contact region 7 of the first conductivity type is located on the upper right side inside the drift region 2 of the semiconductor of th...

Embodiment 2

[0026] Such as figure 2 As shown, the difference between this embodiment and Embodiment 1 is that there are multiple layers of polysilicon strips 8 in the insulating layer 7 , each layer of polysilicon strips 8 are parallel to each other, and there is a longitudinal interval between adjacent polysilicon strips 8 . The vertical direction refers to the direction from the surface of the insulating layer 7 to the inside of the first conductivity type semiconductor drift region 2 .

[0027] This structure will further improve the radiation resistance of the device. There is no radiation-induced charge inside the parallel polysilicon strips. The impact of radiation on the oxide layer will be further reduced, and the modulation of the electric charge on the terminal electric field will be further reduced.

Embodiment 3

[0029] Such as image 3 As shown, the difference between this embodiment and Embodiment 1 is that the polysilicon strips 8 located in the insulating layer 7 are distributed intermittently in the lateral direction. This structure will further improve the anti-radiation capability of the terminal. A plurality of discontinuous polysilicon strips will modulate the terminal electric field in a non-radiative state and improve the withstand voltage of the device.

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Abstract

The invention provides a lateral radiation-resistant power device structure, comprising a second conductive type of semiconductor substrate, a first conductive type of semiconductor drift region, a second conductive type of semiconductor well region, a second conductive type of semiconductor contact region, and a first conductive type of semiconductor contact region, wherein a portion of the uppersurface of the first conductive type of semiconductor contact region and a portion of the upper surface of the second conductive type of semiconductor well region are covered with an insulating layer; the left side of the first conductive type of semiconductor contact region is embedded in an insulating layer; the upper left part of the insulating layer is covered with polycrystalline silicon; and a polycrystalline silicon strip is embedded in the insulating layer. An polycrystalline silicon layer is introduced into the thick field oxygen to prevent holes generated by irradiation ionization from moving toward a field oxide layer / drift region interface, thereby reducing the hole trapping rate of a trap near the field oxide layer / drift region interface, suppressing the modulation effect ofthe ionizing radiation trap charges on the potential field and carrier behaviors in the body, and realizing the radiation-resistant strengthening of the device. The lateral radiation-resistant power device structure can well solve the radiation resistance of the device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a lateral anti-radiation power device structure. Background technique [0002] With the development of space technology, nuclear technology and strategic weapon technology, various electronic devices have been widely used in artificial satellites, spaceships, launch vehicles, long-range missiles and nuclear weapon control systems. Power high-voltage integratable devices represented by LDMOS devices are widely used in power high-voltage integrated circuits such as power circuits, analog switching circuits, and high-voltage drive circuits due to their characteristics of easy integration and fast switching speed. The electronic components that make up the electronic equipment are inevitably exposed to strong radiation application environments such as space radiation and nuclear radiation. Contents of the invention [0003] The object of the present...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L23/552
Inventor 周锌李怡袁章亦安乔明张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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