A Lateral Radiation Hardened Power Device Structure

Abstract

The present invention provides a lateral anti-radiation power device structure, including a second conductivity type semiconductor substrate, a first conductivity type semiconductor drift region, a second conductivity type semiconductor well region, a second conductivity type semiconductor contact region, and a second conductivity type semiconductor contact region. One conductivity type semiconductor contact region, part of the upper surface of the first conductivity type semiconductor contact region and part of the upper surface of the second conductivity type semiconductor well region are covered with an insulating layer, and the left side of the first conductivity type semiconductor contact region is embedded with insulation layer; the upper left of the insulating layer is covered with polysilicon; the insulating layer is embedded with polysilicon strips, and the polysilicon layer is introduced into the thick field oxygen to prevent holes generated by radiation ionization from moving to the interface of the field oxide layer / drift region and reduce the field oxide layer. The capture rate of traps near the interface of the / drift region to holes can suppress the modulation effect of ionizing radiation trap charges on the potential field and carrier behavior in the body, and realize the radiation resistance reinforcement of devices. The invention can well solve the radiation resistance of devices according to the question.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a lateral anti-radiation power device structure. Background technique [0002] With the development of space technology, nuclear technology and strategic weapon technology, various electronic devices have been widely used in artificial satellites, spaceships, launch vehicles, long-range missiles and nuclear weapon control systems. Power high-voltage integratable devices represented by LDMOS devices are widely used in power high-voltage integrated circuits such as power circuits, analog switching circuits, and high-voltage drive circuits due to their characteristics of easy integration and fast switching speed. The electronic components that make up the electronic equipment are inevitably exposed to strong radiation application environments such as space radiation and nuclear radiation. Contents of the invention [0003] The object of the present...

AI Technical Summary

Problems solved by technology

Electronic components that make up electronic equipment are inevitably exposed to strong radiation applications such as space radiation and nuclear radiation. Radiation effects will cause damage to the performance of components to varying degrees, and cause the entire electronic equipment to fail

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