A method for upgrading nv parameters of a high-pass platform

A high-pass platform and parameter technology, applied in the field of communication, to achieve the effect of reducing operation errors, reducing manpower and time investment, and improving efficiency

Inactive Publication Date: 2019-05-10
成都智慧海派科技有限公司
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A natural disadvantage of this method is that when it is necessary to modify, delete and add some NV to P1, it is necessary to manually operate each mobile phone with Qualcomm tools

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for upgrading nv parameters of a high-pass platform
  • A method for upgrading nv parameters of a high-pass platform

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be further described below in conjunction with the description of the drawings and specific embodiments.

[0024] Such as Figure 1 to Figure 2 As shown, a method for upgrading nv parameters of a Qualcomm platform includes: adding a version number and an NV item file when making an image file in the NV partition P2 storing NV parameter initialization values ​​(this file includes all NVIDs in the image, that is, making write the NVIDs of all NVs contained in the image into the file). Read and compare the version number saved in the current NV working partition P1 and the version number in the image in the NV partition P2 storing the NV parameter initialization value when starting up. If the software version numbers of the two are the same, there is no need to upgrade the NV; if Inconsistent, then it is necessary to update the NV in the NV partition P2 storing the NV parameter initialization value to the current NV working partition P1, complet...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a high-pass platform nv parameter upgrading method, which comprises the following steps of: S1, when an image file in an NV partition P2 for storing an NV parameter initialization value is manufactured, adding a version number and an NV item file; S2, when the NV is started, reading and comparing the version number stored in the working partition P1 of the current NV with the version number of the image file in the NV partition P2 for storing the initial value of the NV parameter, and if the version numbers of the version number and the image file are consistent, not upgrading the NV; and if the NV parameter initialization value is not consistent with the NV parameter initialization value, the NV in the NV partition P2 storing the NV parameter initialization value isupdated to the working partition P1 of the current NV, upgrading is completed, and the purpose of modifying, deleting and increasing the NV parameter in the working partition P1 of the current NV isachieved. The device has the beneficial effects that the efficiency is improved, and the investment of manpower and time is reduced; and operation errors which may occur in manual operation are reduced.

Description

technical field [0001] The invention relates to communication, in particular to a method for upgrading nv parameters of a Qualcomm platform. Background technique [0002] NV refers to non-volatile memory (non-volatile memory), abbreviated as NVRAM. The NV on the device based on the Qualcomm platform is a dedicated file system used to save some parameter values ​​​​used in each module. Each NV includes an NV item (NVID) and an NV value (NV value). Using NV to save data is not easy to lose, but the NV system of Qualcomm platform has a disadvantage, that is, it is not easy to update and upgrade. [0003] The Qualcomm platform NV system mainly involves two partitions: [0004] 1. The current NV working partition P1 (the Qualcomm platform is officially defined as the modemst1 partition and modemst2 partition, which is uniformly represented by P1 in this article), this partition mainly stores the results of reading, writing and deleting NV parameters when the NV system is workin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F8/71
Inventor 刘安黎聪吴诚陈春英
Owner 成都智慧海派科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products