Thin film transistor and its manufacturing method, device, chip and display device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BOE TECH GRP CO LTD
- Publication Date
- 2021-01-15
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Abstract
Description
technical field
[0001] The present application relates to the technical field of semiconductors, in particular to a thin film transistor and its manufacturing method, device, chip and display device. Background technique
[0002] A thin film transistor is an essential semiconductor device in chips and display devices. The important components of the thin film transistor include: an active layer and a source-drain layer, and the source-drain layer includes a source electrode and a drain electrode with intervals.
[0003] In the related art, when manufacturing the source and drain layers in a thin film transistor, usually an electrode material layer is formed first, and then the electrode material layer is patterned to obtain the source and drain layers.
[0004] However, the precision of the patterning process in the related art is low, so that the distance between the source and the drain is often large, resulting in a large size of the thin film transistor. Contents of t...