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Image sensor device and method for forming same

A technology for image sensing devices and sensing areas, applied in radiation control devices, electrical components, electric solid devices, etc., can solve the problems of reduced structure size, difficult process, small image sensing devices, etc.

Pending Publication Date: 2019-05-17
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the size of structures continues to shrink, making it increasingly difficult to process
As a result, how to form reliable and smaller and smaller image sensing devices is a big challenge

Method used

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  • Image sensor device and method for forming same
  • Image sensor device and method for forming same
  • Image sensor device and method for forming same

Examples

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Embodiment Construction

[0060] The following disclosure provides many different embodiments or examples for implementing different structures of the disclosure. The following examples of specific components and arrangements are used to simplify the present disclosure rather than to limit the present disclosure. For example, the statement that the first component is formed on the second component includes that the two are in direct contact, or there are other additional components interposed between the two instead of direct contact. In addition, multiple examples of the present disclosure may use repeated numbers and / or symbols to simplify and clarify the description, but these repetitions do not mean that elements with the same numbers in various embodiments have the same corresponding relationship.

[0061] In addition, spatial relative terms such as "below", "beneath", "lower", "above", "above", or similar terms may be used to simplify describing the relationship between one element and another el...

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PUM

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Abstract

A method for forming an image sensor device is provided. The method includes forming a first trench in a semiconductor substrate. The semiconductor substrate has a front surface and a back surface, and the first trench extends from the front surface into the semiconductor substrate. The method includes forming a first isolation structure in the first trench. The method includes forming a light-sensing region in the semiconductor substrate. The first isolation structure surrounds the light-sensing region. The method includes forming a second trench in the semiconductor substrate. The second trench extends from the back surface into the semiconductor substrate and exposes the first isolation structure. The method includes forming a second isolation structure in the second trench. The secondisolation structure includes a light-blocking structure to absorb or reflect incident light.

Description

technical field [0001] Embodiments of the present disclosure relate to an image sensing device, and more particularly to a light blocking structure of an isolation structure thereof. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. Technological advances in integrated circuit materials and design have resulted in each generation of integrated circuits being smaller and more complex than the previous generation. The new generation of integrated circuits has a larger functional density (such as the number of interconnection elements in a fixed chip area), and a smaller size (such as the smallest component formed by the process). These advances increase the complexity of integrated circuit processes. To achieve the above progress, similar developments are required in integrated circuit technology. [0003] In addition to reducing the geometric size to achieve the above-mentioned advantages, the integrated circuit devic...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14623H01L27/14645H01L27/1462H01L27/14621H01L27/14627H01L27/14689H01L27/1463H01L27/1464H01L27/14629H01L27/14636H01L27/14685H01L27/14687
Inventor 郑允玮周俊豪李国政黄薰莹
Owner TAIWAN SEMICON MFG CO LTD