Memory circuit, self-adaptive negative voltage write auxiliary control method and chip

Abstract

The invention provides a memory circuit, a self-adaptive negative voltage write auxiliary control method and a chip. The memory circuit comprises a memory array; The negative voltage write auxiliary circuit is connected with the storage array and used for adjusting the working state of the negative voltage applied to the bit line pair according to the state of the negative voltage write enable signal; The negative voltage write enable signal self-adaptive control circuit is connected with the negative voltage write assist circuit and transmits a negative voltage write enable signal to the negative voltage write assist circuit; The negative voltage write enable signal self-adaptive control circuit comprises a copy storage array which is a copy structure of the storage array; And the negative voltage write auxiliary circuit is used for detecting the data writing condition of the copy storage array, and adjusting the state of the negative voltage write enable signal according to the detected data writing condition, so as to control the negative voltage write auxiliary circuit to adjust the working state of the negative voltage through the negative voltage write enable signals in different states. The write success rate of the memory can be improved, and the power consumption cost of the memory is reduced.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of memory, and in particular to a memory circuit, an adaptive negative voltage write assist control method, and a chip. Background technique [0002] Memory is a device used to store data in a chip. As a typical memory, static memory is widely used in scenarios that require high-speed data storage due to its advantages of low power consumption and fast reading speed (for example, static memory can be used for data processing system and store data), a typical static memory such as SRAM (Static Random-Access Memory, static random access memory) and the like. [0003] Due to process fluctuations (such as manufacturing process deviations), power supply voltage drop, etc., the storage cells of the memory are often difficult to write. Therefore, how to improve the write success rate of the memory has always been a problem considered by those skilled in the art. Contents of the invention ...

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Problems solved by technology

[0003] Due to process fluctuations (such as process deviations), power supply voltage drops, etc., the storage cells of the memory often have writing difficulties. Therefore, how to improve the write success rate of the memory has always been a problem considered by those skilled in the art.

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