Memory circuit, self-adaptive negative voltage write auxiliary control method and chip
A memory circuit and self-adaptive control technology, applied in the field of memory, can solve problems such as writing difficulties, achieve balance, increase success probability, and guarantee success rate
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[0031] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
[0032] Optional, figure 1 Shows an optional structure of the memory circuit, such as figure 1 The illustrated memory circuit may include: a memory array 1 and a negative voltage write auxiliary circuit 2.
[0033] Among them, the storage array 1 may be an array structure composed of a plurality of storage units, and the storage unit is a basic unit structure for storing data; optionally, refer to figure 1 , The storage array can include:
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