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Crucible device for growing crystal

A crucible and crystal growing technology, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of polysilicon material hanging, quality defects of quartz crucible, unreasonable material processing, etc., and achieves a small thermal field temperature distribution. , with good effect

Inactive Publication Date: 2019-05-28
ZING SEMICON CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

The main reasons for this phenomenon include: hanging edges of polysilicon material, partial defects in the quality of quartz crucible, and unreasonable chemical material

Method used

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  • Crucible device for growing crystal
  • Crucible device for growing crystal
  • Crucible device for growing crystal

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Abstract

The invention provides a crucible device for growing crystal. The crucible device comprises a support device, a quartz crucible and an anti-deformation ring, wherein the quartz crucible is arranged inside the support device, and the edge of the quartz crucible is higher than that of the support device; the anti-deformation ring is provided with a groove, the edge of the quartz crucible is clampedin the groove of the anti-deformation ring, and the anti-deformation ring is prepared from a high temperature-resistant material. According to the crucible device for growing the crystal provided by the invention, the anti-deformation ring therein can prevent the quartz crucible from generating a turned-down edge, has a relatively small influence on thermal field temperature distribution, and cooperates well with the quartz crucible and the support device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a crucible device for growing crystals. Background technique [0002] At present, the method for preparing large-sized single crystal silicon is mainly the Czochralski method, that is, polycrystalline silicon is melted in a crucible, the seed crystal is immersed in the liquid surface of the silicon melt, and the seed crystal is slowly pulled, thereby A silicon single crystal having the same crystallographic direction as the seed crystal is grown. Among them, in order to avoid pollution to the silicon material, a quartz crucible is usually used as a container for the silicon material. Since the quartz crucible becomes glassy at high temperature, the outer graphite crucible is required to provide support to ensure that the quartz crucible maintains a fixed shape during the crystal growth process. [0003] With the continuous development of crystal growth technology, the si...

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Application Information

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IPC IPC(8): C30B15/10C30B29/06
Inventor 邓先亮
Owner ZING SEMICON CORP
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