Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for performing system backup, memory device and controller thereof, and electronic device

A memory device and system backup technology, applied in memory systems, program control devices, instruments, etc., can solve problems such as instability of multi-level cell flash memory, and achieve the effect of a robust data access mechanism

Inactive Publication Date: 2019-05-28
SILICON MOTION INC (CN)
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, problems caused by the instability of multi-level cell flash memory have also emerged one by one

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for performing system backup, memory device and controller thereof, and electronic device
  • Method for performing system backup, memory device and controller thereof, and electronic device
  • Method for performing system backup, memory device and controller thereof, and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] I. Memory system

[0046] figure 1It is a schematic diagram of an electronic device 10 according to an embodiment of the present invention, wherein the electronic device 10 may include a host device (host device) 50 and a memory device 100 . The main device 50 may include at least one processor (eg, one or more processors), which may be collectively referred to as a processor 52 , and may further include a power supply circuit 54 coupled to the processor 52 . The processor 52 is used to control the operation of the main device 50 , and the power supply circuit 54 is used to provide power to the processor 52 and the memory device 100 , and output one or more driving voltages to the memory device 100 . The memory device 100 can be used to provide storage space for the host device 50 , and can obtain the one or more driving voltages from the host device 50 as a power source for the memory device 100 . Examples of the host device 50 may include (but not limited to): multi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for performing system backup in a memory device, the associated memory device and a controller thereof, and an associated electronic device. The method may include: writing system information of the memory device at a plurality of locations within the NV memory to make the system information be stored at a first location and a second location within the plurality of locations, respectively, with the system information being internal control information of the memory device, and the system information stored at the second location being equivalent to that storedat the first location; and when the system information stored at the first location is not available, reading the system information stored at the second location to control the memory device to operate according to the system information read from the second location.

Description

technical field [0001] The present invention relates to memory control, especially a method for system backup in memory devices, related memory devices and their controllers, and related electronic devices. Background technique [0002] In recent years, due to the continuous development of memory technology, various portable or non-portable memory devices (such as memory cards conforming to SD / MMC, CF, MS and XD standards respectively, or embedded memory cards conforming to UFS and EMMC standards respectively) Embedded memory devices) are widely implemented in many applications. Therefore, access control of memory in these memory devices has become a very hot topic. [0003] As far as the commonly used NAND flash memory is concerned, it can be mainly divided into two types of flash memory: single level cell (SLC) and multiple level cell (MLC). Each transistor in the single-level cell flash memory, which is regarded as a memory cell, has only two charge values, which are re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02G06F12/16
CPCG06F12/0246G06F9/4401G06F2212/7201G06F2212/7207G06F2212/7208G06F2212/1032G06F3/0679G06F3/064G06F3/0619G06F11/2094G06F11/1446G06F3/065G06F12/1009G06F2212/657G06F3/0659
Inventor 郑张铠邱慎廷陈静怡
Owner SILICON MOTION INC (CN)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com