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Flash memory service life prediction method and system based on characteristic quantity and storage medium

A technology of life prediction and feature quantity, applied in the field of flash memory life prediction, it can solve problems such as data loss, and achieve the effect of high practicability, high accuracy and independence

Active Publication Date: 2019-05-31
武汉置富半导体技术有限公司
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AI Technical Summary

Problems solved by technology

At present, flash memory storage devices can only correct errors through error-correcting codes after errors occur in storage cells; and all error-correcting codes can only correct data errors with a limited number of bits, and the number of errors in flash memory exceeds the errors that error-correcting codes can correct data that is not corrected will be permanently lost

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  • Flash memory service life prediction method and system based on characteristic quantity and storage medium
  • Flash memory service life prediction method and system based on characteristic quantity and storage medium
  • Flash memory service life prediction method and system based on characteristic quantity and storage medium

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Embodiment Construction

[0043] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0044] figure 1 It is a schematic flow chart of predicting the lifetime of flash memory in the present invention, and the life prediction flow of flash memory shown in the figure is applicable to all types of flash memory. figure 1 Give a detailed explanation.

[0045] In this embodiment, a 3D multi-level cell NAND flash (MLC NAND flash) product under a certain manufacturing process is used as a measurement object and a lifetime prediction object.

[0046] In step S01, the data acquisition device measures the feature quantity data required to predict the lifetime of the target flash memory, and the acquired data is stored in the storage space by the data acquisition device. The characteristic quantities of the fla...

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Abstract

The invention relates to a flash memory service life prediction method and system based on characteristic quantity, and a storage medium. The method includes: measuring one characteristic quantity ora combination of several characteristic quantities of the flash memory, calculating all the characteristic quantities or part of the characteristic quantities in the combination, calculating or judging an operation result or a measurement result or a combination of the operation result and the measurement result according to a certain rule, and predicting the service life of the flash memory according to the calculation or judgment result. The service life of the flash memory is predicted on the basis of the characteristic quantities of various flash memories, compared with a service life prediction method based on only one characteristic quantity, the service life value prediction accuracy is higher, the application range is wide, the method can be achieved in various modes, and high practicability is achieved.

Description

technical field [0001] The present invention relates to the technical field of life prediction of flash memory, in particular to a method, system and storage medium for life prediction of flash memory based on feature quantities. Background technique [0002] Memory is a memory device used to store information in modern information technology. During the calculation process of electronic equipment, the input raw data, computer programs, intermediate operation results and final operation results are all stored in the memory. It can be said that the memory is one of the core components of the development of modern information technology. Flash memory is a non-volatile memory that stores data by changing the threshold voltage of memory cells. In modern life, flash memory is widely used in related fields of data storage due to its advantages of low manufacturing cost, large storage capacity, anti-shock and anti-magnetic storage medium, fast read and write speed, non-volatile da...

Claims

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Application Information

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IPC IPC(8): G11C16/34G11C29/56
Inventor 刘政林潘玉茜张浩明李四林
Owner 武汉置富半导体技术有限公司
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