Manufacturing method of self-aligned double patterning semiconductor structure

Abstract

The invention discloses a manufacturing method of a self-aligned double patterning semiconductor structure, which includes the following steps: providing a semiconductor substrate on which a film to be etched, a core pattern film and a patterned first photoresist layer are formed in sequence; etching the core pattern film with the first photoresist layer as a mask to form a first-size core patternlayer and a second-size core pattern layer; forming spacers on both sides of the first-size core pattern layer and the second-size core pattern layer; forming a second photoresist layer covering thesecond-size core pattern layer; removing the first-size core pattern layer and the second photoresist layer; etching the film to be etched with the spacers and the second-size core pattern layer as amask; and removing the spacers and the second-size core pattern layer to form a self-aligned double pattern. The manufacturing method of the invention has simple process steps, and solves the problemthat it is difficult to control the shape of the self-aligned double pattern because it is difficult to control the nesting accuracy during alignment of the second-size core pattern layer with the first-size core pattern layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a self-aligned double patterned semiconductor structure. Background technique [0002] In semiconductor integrated circuits, with the continuous reduction of the feature size of semiconductor technology, in order to improve the integration of semiconductor devices, a variety of double-layer patterning processes have been proposed in the industry. Among them, self-aligned double patterning (Self-Aligned Double Patterning, SADP ) process is one of them. [0003] In the prior art, when two core pattern layers of different sizes are formed on the same core layer in a semiconductor device, the small-size core pattern and the large-size core pattern must undergo two exposure processes before and after, that is, after forming the small When a core pattern with a small size and a core pattern with a large size need to be formed separately, ...

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Problems solved by technology

[0004] The object of the present invention is to provide a method for fabricating a self-aligned double patterned semiconductor structure, so as to solve the need for two exposures before and after the existing self-aligned double patterned semiconductor structure method, which eventually leads to the self-aligned double patterned semiconductor structure formed later. The problem that the shape of layer graphics is difficult to control

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