Semiconductor device assembly, semiconductor device and manufacturing method thereof
A technology of semiconductors and assemblies, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc.
Inactive Publication Date: 2019-06-11
MICRON TECH INC
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[0021] In this disclosure, numerous specific details are discussed in order to provide a thorough and enabling description of embodiments of the invention. One skilled in the art will recognize that the invention may be practiced without one or more of the specific details. Well-known structures and / or operations typically associated with semiconductor devices may not be shown and / or may not be described in detail to avoid obscuring other aspects of the present invention. In general, it should be understood that various other devices, systems and / or methods other than the specific embodiments disclosed herein may be within the scope of the invention.
[0022] The term "semiconductor device assembly" may refer to an assembly of one or more semiconductor devices, semiconductor device packages, and / or substrates (which may include interposers, supports, and / or other suitable substrates). Semiconductor device assemblies may be manufactured in, but not limited to, discrete package...
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The invention relates to a semiconductor device assembly, a semiconductor device and a manufacturing method thereof. The semiconductor device assembly includes a first substrate, a second substrate disposed over the first substrate, at least one interconnect between the substrates, and at least one pillar extending from the bottom surface of the first substrate. The pillar is electrically connected to the interconnect and is located adjacent to a side of the first substrate. The pillar is formed by filling a via through the substrate with a conductive material. The first substrate may includean array of pillars extending from the bottom surface adjacent to a side of the substrate that are formed from a plurality of filled vias. The substrate may include a test pad located on the bottom surface or located on the top surface. The pillars may include a removable coating enabling the pillars to be probed without damaging the inner conductive portion of the pillar.
Description
technical field [0001] Embodiments described herein relate to semiconductor devices, semiconductor device assemblies, and methods of providing such semiconductor devices and semiconductor device assemblies. The present invention relates to a semiconductor device having a plurality of pillars extending from a bottom surface, the plurality of pillars being formed of vias (also referred to herein as through-silicon vias (TSVs)) filled with a conductive material. The vias may be filled with copper, tungsten, polysilicon or the like. The plurality of pillars may be in a rectangular array positioned adjacent to the sides of the semiconductor device. Background technique [0002] Semiconductor device assemblies, including but not limited to memory chips, microprocessor chips, imager chips, and the like, typically include a semiconductor device, such as a die, mounted on a substrate. The semiconductor device assembly can include various functional features, such as memory cells, p...
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IPC IPC(8): H01L21/768
CPCH01L2924/15192H01L2924/15312H01L2224/16147H01L24/13H01L24/16H01L24/81H01L2224/0401H01L2224/0557H01L2224/13147H01L2224/16146H01L2224/16238H01L2224/81191H01L2224/81192H01L2924/10253H01L2924/1434H01L2924/157H01L2225/06596H01L2225/06513H01L2225/06517H01L2225/06541H01L2225/06565H01L25/0657H01L2224/16145H01L22/32H01L21/76898H01L23/49811H01L23/49822H01L21/4853H01L2224/73265H01L2924/00014H01L2224/32145H01L2224/48227H01L2924/00H01L21/486H01L23/49827H01L21/481H01L22/20H01L2225/06548H01L23/481
Inventor 欧文·R·费伊阿克沙伊·N·辛格凯尔·K·柯比
Owner MICRON TECH INC