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Device structure based on common surface barrier regulation and preparation method thereof

A technology for device structure and interface control, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, electrical components, etc., can solve the problem of high failure rate and control device structure. problems such as low sensitivity and poor reliability, to achieve the effects of improved sensitivity, simplified preparation process steps, and high reliability

Inactive Publication Date: 2019-07-02
LANZHOU UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a device structure based on common surface barrier regulation and its preparation method, which is used to solve the problem of low sensitivity, poor reliability and failure rate of the regulation device structure in the prior art. high-level questions

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  • Device structure based on common surface barrier regulation and preparation method thereof
  • Device structure based on common surface barrier regulation and preparation method thereof
  • Device structure based on common surface barrier regulation and preparation method thereof

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Embodiment Construction

[0065] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0066] see Figure 1 to Figure 17 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic concept of the present invention, although only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the shape, quantity and proportion of each component can be changed arbitrarily during actual implementation, and...

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Abstract

The present invention provides a device structure based on common surface barrier regulation and a preparation method thereof. The structure comprises a polar material unit which is at least providedwith a first polar surface for forming regulation charges on at least the first polar surface; at least two first electrode units which are are arranged on the first polar surface, wherein the adjacent first electrode units are spaced from each other, , and the interface contact part between the first electrode units and the polar material unit is based on the formation of a first interface regulation unit provided with barriers; and a measuring circuit which is electrically connected with different first electrode units and forms a measuring loop so as to realize the test of the electric transport signal regulated by the first interface regulation unit. With application of the technical scheme, multiple electrodes contact the single polar surface of the polar material unit and the interface regulation units are all located on the single polar surface so that multi-interface co-directional regulation can be realized, the sensitivity and reliability of the device and the stability of the device performance can be improved and the preparation process steps can be greatly simplified.

Description

technical field [0001] The invention belongs to the technical fields of piezoelectricity, electronics and sensors, and in particular relates to a sensor and a preparation method based on common surface potential barrier regulation. Background technique [0002] In the fields of piezoelectricity, electronics and sensor technology, the piezoelectronics effect can realize piezoelectrically regulated transistors and ultra-high-precision deformation characterization. With the in-depth research in the past ten years, this effect has made remarkable achievements in the fields of piezoelectric control transistors and pressure sensors, and has published many articles in the world's top journals "Science" and "Nature". Widespread concern and interest in the scientific community. The piezoelectric electronics effect mainly occurs at the interface with a potential barrier formed between the piezoelectric material and the metal electrode. The material is deformed by an applied stress to...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/113H10N30/30
CPCH10N30/30H10N30/03
Inventor 秦勇刘书海王龙飞
Owner LANZHOU UNIVERSITY