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MIM capacitor structure and preparation method thereof

A capacitor structure and electrode technology, applied in circuits, electrical components, electric solid devices, etc., can solve problems such as capacitor capacity requirements, and achieve the effect of improving utilization

Inactive Publication Date: 2019-07-05
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a MIM capacitor structure and its preparation method, to solve the requirements for capacitance capacity in the prior art

Method used

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  • MIM capacitor structure and preparation method thereof
  • MIM capacitor structure and preparation method thereof
  • MIM capacitor structure and preparation method thereof

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Embodiment Construction

[0057] figure 1 It is a simple schematic diagram of a capacitor structure. Such as figure 1As shown, a traditional capacitor structure includes a first electrode 10, a second electrode 20, and an inter-electrode dielectric layer 30. The first electrode 10 includes a first electrode layer 11 and a first metal connection structure 12 connected to each other. The second electrode 20 includes a second electrode layer 21 and a second metal connection structure 22 connected to each other, the inter-electrode dielectric layer 30 covers the first electrode layer 11, and the second electrode layer 21 covers the inter-electrode dielectric layer 30. It can be seen that when the capacitance of this structure needs to be increased, the chip area occupied by the capacitance needs to be increased, or the distance between the first electrode and the second electrode should be reduced. However, when the distance between the first electrode and the second electrode reaches a limit distance, ...

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Abstract

The invention provides an MIM capacitor structure and a preparation method thereof. The MIM capacitor structure can enable the capacitor capacity of the MM capacitor structure to include the sum of the capacitor capacity of a first capacitor structure and the capacitor capacity of a second capacitor structure through additionally arranging the second capacitor structure in the longitudinal direction of the first capacitor structure without increasing the chip area occupied by the first capacitor structure in the MIM capacitor structure, thereby meeting the demand of a chip for capacitance, andimproving the utilization rate of the chip for the design area.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a MIM capacitor structure and a preparation method thereof. Background technique [0002] At present, capacitors in semiconductor devices can be roughly classified into polysilicon-insulator-polysilicon (PIP) capacitors and metal-insulator-metal (MIM) capacitors according to their structures. In practical applications, these capacitors can be selectively used according to the characteristics of semiconductor devices. For example, in high-frequency semiconductor devices, MIM capacitors can be used. [0003] With the improvement of the integration level of semiconductor devices, capacitors are required to have larger capacitance values ​​to ensure that the capacitors can work normally. However, for PIP capacitors, oxidation easily occurs at the interface between polysilicon as upper / lower electrode plates and an insulating layer as a capacitor dielectric layer...

Claims

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Application Information

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IPC IPC(8): H01L23/522H01L21/768
CPCH01L21/768H01L23/5222
Inventor 高学
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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