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Patterning photoresist removing method

A negative photoresist and patterning technology, which is applied in the field of semiconductor manufacturing technology, can solve the problem that it is difficult to remove the photoresist layer.

Inactive Publication Date: 2019-07-09
UNITED MICROELECTRONICS CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the subsequent photoresist removal step, it is difficult to completely remove the photoresist layer with the carbonized shell, especially for negative photoresists.

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Embodiment Construction

[0032] In the following, details will be explained with reference to the accompanying drawings, the contents of which also constitute a part of the detailed description of the specification, and are shown in a specific example in which the embodiment can be practiced. The following examples are described in sufficient detail to enable those of ordinary skill in the art to implement them.

[0033] Of course, other embodiments may also be adopted, or any structural, logical, and electrical changes may be made without departing from the embodiments described herein. Therefore, the following detailed description should not be taken as limiting, but rather the embodiments contained therein will be defined by the appended claims.

[0034] The present invention relates to a method of removing a patterned negative photoresist from a substrate. The patterned negative photoresist may refer to a negative photoresist processed by a high-dose implant (HDI) ion implantation process or a we...

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Abstract

The invention discloses a patterning photoresist removing method and particularly discloses a method of removing a patterning negative photoresist from a substrate. The method comprises the steps that(a) the substrate provided with the patterning negative photoresist is placed on an ejector pin of a wafer base; (b) the ejector pin is dropped, the substrate is located at a low position of the ejector pin, and meanwhile the substrate is heated to first temperature, wherein the first temperature does not exceed 100 DEG C; (c) the ejector pin is raised, and the substrate is located at a high position of the ejector pin; (d) an ammonia-contained gas is used to generate plasma; and (e) the substrate is made to be in contact with the plasma at the high position of the ejection pin, and then thesubstrate is made to move at the high position of the ejector pin and the low position of the ejector pin alternately, so that the patterning negative photoresist is removed completely.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a method for removing a patterned negative photoresist from a substrate. Background technique [0002] In high-dose and high-energy ion implantation processes in semiconductor manufacturing, patterned photoresists are often used as ion implantation masks on wafers. [0003] It is known that during the ion implantation process, the upper surface of the photoresist layer may be converted into a carbide shell layer containing dopants such as arsenic, phosphorus and / or boron. The thickness of the carbide shell and the implantation depth of the dopant are often related to the ion implantation energy and the type of the dopant. Beneath this carbide shell, the remainder of the photoresist layer remains. [0004] However, in the subsequent photoresist removal step, it is difficult to completely remove the photoresist layer with the carbonized shell layer,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027
CPCH01L21/0273G03F7/038G03F7/427H01L21/31138
Inventor 黄丰铭蔡建成
Owner UNITED MICROELECTRONICS CORP
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