Power device and manufacturing method thereof
A power device, conductive type technology, applied in the field of power semiconductor devices and their manufacturing, can solve problems such as low Rds-on transistors
Active Publication Date: 2019-07-12
FAIRCHILD SEMICON CORP
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- Application Information
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Problems solved by technology
For example, in the case of power MOSFETs, this brings the potential to improve the voltage performance of the transistor while maintaining a low Rds-on due to the proportional relationship between the drain-to-source on-resistance Rds-on and the breakdown voltage. took the challenge
Method used
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Embodiment approach
[0151] According to one embodiment, by rotating the wafer by 22.5 degrees, non-uniform epi filling caused by changes in planar orientation can be eliminated. this is in Figure 28 explained in. It can be seen that by rotating the wafer and thus the chip on the wafer during the photolithography process, the chip can be oriented such that all trench sidewalls are aligned along the plane direction. exist Figure 28 in, with Figure 27A Similarly, P pillars 2810 and N pillars 2806 in active region 2812 and termination region 2814 are concentric octagons, and P pillars 2810 are formed within trenches using techniques disclosed herein. Alternatively, N-pillars 2806 may be formed within the trenches using techniques disclosed herein. In one embodiment, the wafer is held within a 22.5 degree rotational position throughout the process sequence. not shown housed in Figure 28 Structural details of power devices (eg, MOSFETs, IGBTs, or rectifiers) within a chip are shown in , but ...
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A power device comprises a semiconductor region; an active region arranged in the semiconductor region; a terminal region enclosing the active region; a plurality of first conductive pillars; and a plurality of second conductive pillars. The first conductive pillars and second conductive pillars are alternatively arranged in the active region and the terminal region. Each pillar of the second conductive pillars comprises a second conductive type first injection region; a second conductive type second injection region; a trench; and a second conductive type semiconductor material filled in thetrench. The trench is arranged above the second conductive type second injection region and is vertically aligned with the second conductive type second injection region. The horizontal width of the second conductive type pillars in the active region is greater than the horizontal width of the second conductive type pillars in the terminal region.
Description
[0001] Cross References to Related Applications [0002] This application is a divisional application of a Chinese patent application entitled "Superjunction Structure and Manufacturing Method for Power Devices" with an international filing date of April 26, 2012 and application number "201280020540.5". [0003] This application claims priority and benefit to U.S. Nonprovisional Patent Application Serial No. 13 / 095,652, filed April 27, 2011, entitled "Superjunction Structures for Power Devices and Methods of Manufacture," and for the continuation of that case, the case It is hereby incorporated by reference in its entirety. [0004] This application also claims priority and benefit to U.S. Nonprovisional Patent Application Serial No. 13 / 095,664, filed April 27, 2011, entitled "Superjunction Structures for Power Devices and Methods of Manufacture," which is hereby incorporated in its entirety for refer to. [0005] This application also claims priority and benefit to U.S. Nonpr...
Claims
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IPC IPC(8): H01L29/06H01L21/336H01L29/78H01L29/861H01L29/872H01L29/04H01L29/08H01L29/10H01L29/40H01L29/423
CPCH01L29/0634H01L29/66712H01L29/66734H01L29/7811H01L29/7813H01L29/861H01L29/872H01L29/1095H01L29/045H01L29/0649H01L29/0646H01L29/0696H01L29/0878H01L29/42372H01L29/4238H01L29/402H01L29/404H01L29/7802H01L29/7806
Inventor 约瑟夫·A·叶季纳科克里斯托夫·L·雷克塞尔马克·L·赖尼希默普拉韦恩·穆拉利德哈伦·谢诺李在吉哈姆扎·耶尔马兹尹钟晩德韦恩·S·赖希尔潘南西罗德尼·S·里德利哈罗德·海登赖希
Owner FAIRCHILD SEMICON CORP