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Microwave vertical transition connecting structure and microwave device

A technology of vertical transition and connection structure, applied in the field of radio frequency or microwave, it can solve the problems of large volume, poor microwave performance, low interconnection density, etc., and achieve the effect of high interconnection integration.

Inactive Publication Date: 2019-07-16
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of this, the embodiment of the present invention provides a microwave vertical transition connection structure and a microwave device to solve the problems of large volume, low interconnection density, poor microwave performance, complicated installation process and poor versatility of the interconnection forms often used in the prior art. question

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  • Microwave vertical transition connecting structure and microwave device
  • Microwave vertical transition connecting structure and microwave device
  • Microwave vertical transition connecting structure and microwave device

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Embodiment Construction

[0033] In the following description, specific details such as specific system structures and technologies are presented for the purpose of illustration rather than limitation, so as to thoroughly understand the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.

[0034] In order to illustrate the technical solutions of the present invention, specific examples are used below to illustrate.

[0035] figure 1 The schematic diagram of the microwave vertical transition connection structure provided by the embodiment of the present invention is described in detail as follows.

[0036] The microwave vertical transition connection structure includes: a connectio...

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Abstract

The invention is applicable to the technical field of radio frequency or microwaves, and provides a microwave vertical transition connecting structure and a microwave device. The microwave vertical transition connecting structure comprises an upper cavity circuit substrate and a lower cavity circuit substrate fixed to the corresponding positions of the upper side surface and the lower side surfaceof a partition wall of a metal box body respectively, and a connecting module used for connecting the upper cavity circuit substrate and the lower cavity circuit substrate. A vertical interconnectiontechnology of different spatial microwave signals can be realized; the interconnection of microwave signals, low-frequency signals and power supply signals can be integrated; the use frequency can cover DC-40GHz; and the interconnection integration degree is high.

Description

technical field [0001] The invention belongs to the field of radio frequency or microwave technology, and in particular relates to a microwave vertical transition connection structure and a microwave device. Background technique [0002] With the increasing demand for miniaturization, high integration, and low cost of communication electronic equipment, electronic equipment and electronic devices are developing towards three-dimensional structures. For the realization of the three-dimensional structure, there are many and mature technologies at the chip packaging level, such as chip stacking, chip flip-chip, and chip bonding. With the continuous improvement of microwave product integration and miniaturization requirements, the vertical interconnection technology of miniaturization, three-dimensional, high frequency, high interconnection density, and easy assembly needs to be solved. The interconnection forms that are often used now include microwave cables, cables, metal co...

Claims

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Application Information

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IPC IPC(8): H01R12/71H01R13/02H01R13/03H01R31/06H01R13/502H01P1/00
CPCH01P1/00H01R12/716H01R13/02H01R13/03H01R13/502H01R31/06
Inventor 戈江娜肖宁郝金中袁彪杜伟宋学峰潘海波王磊
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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