Localized channel field effect transistor and preparation method thereof
A field effect transistor and localization technology, which is applied in the field of preparation of the field effect transistor to achieve the effects of reducing the minimum noise figure, improving the gain and linearity, and increasing the equivalent conductive cross-sectional area
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[0019] The technical solutions of the present invention will be described in further detail below with reference to the embodiments and the accompanying drawings.
[0020] In this embodiment, the field effect transistor is a GaN high electron mobility transistor (HEMT), and the GaN HEMT structure with localized channel structure is shown in FIG. 1 , wherein FIG. 1( a ) is a top view of the device structure, and FIG. ) is a cross-sectional view of the device structure; 101 is the source, 102 is the drain, 103 is the gate, 104 is the channel well, the channel well 104 is filled with a medium and covered by the gate metal, 105 is an AlGaN barrier layer, 106 It is a GaN channel and a buffer layer, and the substrate layer is not drawn in the figure; the localized channel FET structure proposed by the present invention is not limited to GaN HEMT, and can also be based on semiconductor materials such as Si and GaAs; The channel structure GaN HEMT significantly increases the ratio of ...
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