Localized channel field effect transistor and preparation method thereof

Abstract

The invention discloses a localized channel field effect transistor and a preparation method thereof. The transistor comprises a source, a drain, and a gate between the source and the drain. Channel wells having a certain duty ratio are etched in a channel region covered by a gate pin, are filled with a dielectric, are arranged along the direction in which the channel extends at equal intervals, and have a radial width smaller than a gate length. The preparation method comprises the steps of: (1) preparing a source and a drain; (2) eliminating the conductivity outside an active region and forming the channel wells in the channel region; (3) growing dielectrics on the surface of a device, etching the dielectrics in the gate pin and outside the channel wells by an etching process; and (4) preparing the gate. The method can increase the equivalent conductive cross-sectional area outside the channel of the field effect transistor, reduces a field effect transistor source and drain resistance, alleviates the restriction of the limited conductivity outside the channel on the channel current under a large forward gate bias, improves the gain and linearity of the RF amplification field effect transistor, and reduces the minimum noise factor.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a field effect transistor with a localized channel, and also relates to a preparation method of the field effect transistor. Background technique [0002] RF amplifier circuits based on Si, GaAs, and GaN field effect transistors have important applications in a wide range of fields such as communications, navigation, identification, measurement and control, radio and television, remote sensing and telemetry, radio astronomy, early warning detection, precision tracking, electronic countermeasures, and fire control guidance. . In related applications such as 5G communication, millimeter wave amplification, etc., higher requirements are placed on the linearity and gain characteristics of the device; [0003] At present, the technologies for improving the linearity of field effect transistor radio frequency amplification mainly include analog predistortion, digital predistortion, new circui...

AI Technical Summary

Problems solved by technology

However, there is no method to improve the linearity and gain of field effect transistors through the design of new device structures in the prior art.

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