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Solar cell bypass diode parameter nondestructive detection method

A technology of bypass diodes and solar cells, which is applied in the direction of measuring electricity, photovoltaic power generation, and measuring devices. It can solve the problems of increased error, high cost, and damage to bypass diodes, and achieves simple and reliable principles, integrity retention, and low cost. Effect

Active Publication Date: 2019-08-20
NORTHWEST INST OF NUCLEAR TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The conventional method for obtaining the parameters of the bypass diode of the solar cell is to peel off the bypass diode and the solar cell by means of mechanical damage, and then test the IV curve of the bypass diode, but this method has certain shortcomings: 1) the solar cell after mechanical damage The overall structure is damaged, an

Method used

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  • Solar cell bypass diode parameter nondestructive detection method
  • Solar cell bypass diode parameter nondestructive detection method
  • Solar cell bypass diode parameter nondestructive detection method

Examples

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Embodiment 1

[0037] Embodiment 1: A new three-junction GaAs solar cell, the bypass diode is a Si diode. Figure 6 Shown is the experimental measurement and numerical simulation results of the negative IV curve under no light conditions, the two are in good agreement, from which the reverse saturation current I of the solar cell bypass diode is extracted s,Dsh =4.0×10 -12 a.

Embodiment 2

[0038] Embodiment 2: A triple-junction GaAs solar cell damaged by laser irradiation, and the bypass diode is a Si diode. Figure 7 Shown is the experimental measurement and numerical simulation results of the negative IV curve under no light conditions, the two are in good agreement, from which the reverse saturation current I of the solar cell bypass diode is extracted s,Dsh =6.0×10 -12 a.

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Abstract

The invention provides a solar cell by-pass diode parameter nondestructive detection method. With the method adopted, the parameters of the bypass diode of a solar cell can be obtained under the condition that the solar cell is not damaged. The detection method comprises the following steps that: 1) a solar cell sample is tested under an illumination-free condition, and the negative IV curve of the solar cell sample is obtained; 2) the equivalent circuit model of the solar cell is established, so that the negative IV curve model of the solar cell sample under the illumination-free condition isobtained; 3) the parameters of the established negative IV curve model are optimized according to the measured negative IV curve, and an IV curve is fitted; and 4 ) and the parameter value of a bypass diode Dsh to be detected can be embodied in the optimized negative IV curve model. The method has the advantages of simple and reliable principle, high efficiency, low cost and capability of preserving the integrity of the sample. The results of the method can be applied to solar cell damage tests and provide important data support for solar cell damage effect analysis.

Description

technical field [0001] The invention relates to a method for obtaining solar cell laser damage effect parameters, in particular to an experimental method capable of obtaining solar cell bypass diode parameters under the condition of non-destructive samples. Background technique [0002] For solar cells, because they are often composed of solar cell arrays in actual use, in order to avoid the "hot spot effect" of solar cells during use, it is necessary to install a bypass diode for each solar cell, so as to protect the solar cell array. to a certain degree of protection. Such as figure 1 , figure 2 As shown, the solar cell chip 2 and the bypass diode 1 are glued on the substrate 3 by the substrate glue 4, wherein a part of the bypass diode 1 is between the solar cell chip 2 and the substrate 3, and the solar cell chip 2 and the bypass diode 1 Welding is performed by resistance welding. [0003] In the study of solar cell laser radiation damage, the law of device electric...

Claims

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Application Information

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IPC IPC(8): G01R31/26H02S50/10
CPCG01R31/2601H02S50/10Y02E10/50
Inventor 李云鹏张检民窦鹏程徐作冬师宇斌张震冯国斌
Owner NORTHWEST INST OF NUCLEAR TECH