Solar cell bypass diode parameter nondestructive detection method
A technology of bypass diodes and solar cells, which is applied in the direction of measuring electricity, photovoltaic power generation, and measuring devices. It can solve the problems of increased error, high cost, and damage to bypass diodes, and achieves simple and reliable principles, integrity retention, and low cost. Effect
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Embodiment 1
[0037] Embodiment 1: A new three-junction GaAs solar cell, the bypass diode is a Si diode. Figure 6 Shown is the experimental measurement and numerical simulation results of the negative IV curve under no light conditions, the two are in good agreement, from which the reverse saturation current I of the solar cell bypass diode is extracted s,Dsh =4.0×10 -12 a.
Embodiment 2
[0038] Embodiment 2: A triple-junction GaAs solar cell damaged by laser irradiation, and the bypass diode is a Si diode. Figure 7 Shown is the experimental measurement and numerical simulation results of the negative IV curve under no light conditions, the two are in good agreement, from which the reverse saturation current I of the solar cell bypass diode is extracted s,Dsh =6.0×10 -12 a.
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