Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-voltage light-emitting diode with double-sided horizontal bridging structure and manufacturing method thereof

A bridging structure and high-voltage light-emitting technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of bridge structure height difference and achieve the effect of improving reliability and improving short-circuit and open-circuit conditions

Active Publication Date: 2019-08-23
XIAMEN CHANGELIGHT CO LTD
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the existing series structures of high-voltage diodes are to connect the upper and lower P-type layers and N-type layers of different light-emitting structures in series. Since the P-type layers and N-type layers of different light-emitting structures are not on the same level, bridge connections are required , so that the bridge structure has a certain height difference, and it is more prone to short circuit or open circuit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-voltage light-emitting diode with double-sided horizontal bridging structure and manufacturing method thereof
  • High-voltage light-emitting diode with double-sided horizontal bridging structure and manufacturing method thereof
  • High-voltage light-emitting diode with double-sided horizontal bridging structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0038] As mentioned in the background art, traditional light-emitting diodes generally work under direct current, and the voltage of a single LED chip is generally between 2-4V. In practical applications, especially in high-power light sources, it is generally implemented in series. For example, in the packaging process, a lamp bead uses multiple LED chips in series, or in the lamp assembly process, a light-emitting module uses multiple lamp beads. in series. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-voltage light-emitting diode with a double-sided horizontal bridging structure and a manufacturing method of the high-voltage light-emitting diode. According to the invention, by means of a first series electrode and a second series electrode, the connection of a first type semiconductor layer and a second type semiconductor layer above and below an epitaxial structure is realized. Finally, the serial connection between different light emitting structures is realized. Moreover, a horizontal bridging structure is realized due to the fact that the first serial electrode and the second serial electrode have no large height difference. As a result, the conditions of short circuit and open circuit in the process of manufacturing the high-voltage light emitting diode are improved. The reliability of the high-voltage light-emitting diode is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, more specifically, to a high-voltage light-emitting diode with a double-sided horizontal bridge structure and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED), as a very influential new product in the optoelectronics industry, has the characteristics of small size, long service life, colorful colors, low energy consumption, energy saving and environmental protection, and high safety. Another leap in the history of human lighting after incandescent lamps and fluorescent lamps is driving the upgrading of traditional lighting and display industries. It is widely used in lighting, display screens, signal lights, backlights, toys and other fields. [0003] Traditional light-emitting diodes generally work under direct current, and the voltage of a single LED chip is generally between 2-4V. In practical...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/768H01L27/15
CPCH01L21/76805H01L21/76877H01L27/153H01L2221/101H01L2221/1068
Inventor 林志伟陈凯轩曲晓东赵斌蔡建九
Owner XIAMEN CHANGELIGHT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com