A hybrid pin Schottky diode with half-trench ion implantation
A Schottky diode and ion implantation technology, applied in the field of microelectronics, can solve the problems of reducing device performance, reducing device reliability, and narrowing the current path, so as to improve performance and reliability, reduce on-resistance, reduce small area effect
Active Publication Date: 2021-07-09
XIDIAN UNIV
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Problems solved by technology
[0004] Due to the large ohmic contact area of the P-type region of the Schottky diode with the traditional groove structure, this makes the Schottky conduction channel narrow when the Schottky diode device is forward-conducting, that is, the current The channel narrows, causing the on-resistance to be too large when the Schottky diode device is working normally, thereby reducing the performance of the device and reducing the reliability of the device
Method used
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Embodiment 1
[0027] See figure 1 , figure 1 It is a schematic structural diagram of a half-trench ion-implanted hybrid PiN Schottky diode provided by an embodiment of the present invention.
[0028] An embodiment of the present invention provides a half-trench ion-implanted hybrid PiN Schottky diode, including:
[0029] N + substrate region 1, where the N + The substrate region 1 is highly doped n-type silicon carbide, the n-type silicon carbide is doped with phosphorus material and silicon carbide material, and the doping concentration of the phosphorus material is ≥ 1×10 19 / cm -3 .
[0030] Specifically, the thickness of the n-type silicon carbide is: 200 μm-500 μm.
[0031] Further, a first metal layer is laid on the bottom of the highly doped n-type silicon carbide, and a second metal layer is laid on the bottom of the first metal layer, and finally lead out from the second metal layer with wires Then form the cathode.
[0032] Specifically, the first metal layer is metal Ni, ...
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Abstract
The invention discloses a half-trench ion-implanted hybrid PiN Schottky diode, comprising: N + Substrate region; drift layer, located at N + On the substrate region, the surface of the drift layer includes at least two trenches and a raised structure between two adjacent trenches; the P-type region includes: the P-type region at the bottom of the trench and the P-type region on the sidewall of the trench , the P-type region at the bottom of the trench is located below the bottom of the trench, and the P-type region on the sidewall of the trench is located below the raised structure; the metal layer includes: a first part of the metal layer and a second part of the metal layer, the first part of the metal layer and a part The drift layer forms a Schottky contact, and the second part of the metal layer forms an ohmic contact with the P-type region; the first part of the anode is located on the surface of the Schottky contact and the ohmic contact. The invention adopts the mixed structure of half-trench ion implantation of the P-type region at the bottom of the groove and the P-type region on the side wall of the groove, so as to reduce the on-resistance, thereby improving the performance and reliability of the device.
Description
technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a mixed PiN Schottky diode implanted with half-trench ions. Background technique [0002] With the development of microelectronics technology, the semiconductor material silicon carbide has a large bandgap width, a high critical breakdown electric field, high thermal conductivity and high electron saturation drift velocity and other excellent physical and chemical properties are widely used in the production of semiconductor devices , especially suitable for making semiconductor devices with high temperature, high pressure, high power and radiation resistance. Semiconductor devices, as power electronic devices, have the characteristics of small on-resistance, small leakage current, short switching time, and strong anti-surge capability, and are widely used in circuits. [0003] In a Schottky diode with a traditional trench structure, each trench is a P-type ...
Claims
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IPC IPC(8): H01L29/868H01L29/872H01L29/16H01L29/06
CPCH01L29/0684H01L29/1608H01L29/868H01L29/872
Inventor 宋庆文张玉明汤晓燕袁昊张艺蒙王栋
Owner XIDIAN UNIV