Adding method and adding device for auxiliary graphs, storage medium and processor

A technology for auxiliary graphics and storage media, which is applied in the fields of electrical digital data processing, special data processing applications, and photoengraving technology of patterned surfaces. It can solve the problems of low accuracy of insertion method, and achieve convenient and simple speed and accurate auxiliary graphics , to meet the effect of speed and precision

Active Publication Date: 2019-09-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The main purpose of this application is to provide a method for adding auxiliary graphics, an adding device, a storage mediu

Method used

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  • Adding method and adding device for auxiliary graphs, storage medium and processor
  • Adding method and adding device for auxiliary graphs, storage medium and processor
  • Adding method and adding device for auxiliary graphs, storage medium and processor

Examples

Experimental program
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Embodiment

[0067] The methods of adding auxiliary graphics include:

[0068] In the first step, the main graphics are designed according to the basic rules of the pre-made graphics.

[0069] In this step, at first define the center point and side length of each main figure 11, the line width and repetition period of the line, and output it to a certain layer of the layout, such as image 3 as shown, Figure 4 It is another conventional design scheme of the two-dimensional main figure 11 .

[0070] If it is necessary to extract auxiliary graphics to one-dimensional graphics, the one-dimensional main graphics 11 can be designed as Figure 5 shown.

[0071] The second step is to add accurate auxiliary graphics to the main graphics by using the method of adding auxiliary graphics based on the model.

[0072] In this step, the software sets some restrictions on the size of the sub-resolution assist feature (Sub-Resolution-Assist-FeatureSRAF) to ensure that the final result can meet the re...

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Abstract

The invention provides an adding method and an adding device for auxiliary graphs, a storage medium and a processor. The adding method comprises the following steps: determining test graphs accordingto prefabricated graphs, wherein the test graphs comprise main body graphs and auxiliary graphs, and the auxiliary graphs are obtained through a model calculation method; and extracting the adding rules of the auxiliary graphs according to at least a part of the test graphs. The accuracy of the auxiliary graphs obtained by the method is extremely high, so that the test graphs comprising the auxiliary graphs are also extremely accurate, and then adding rules according to the extraction of the test graphs are more accurate, and the auxiliary graphs added in prefabricated graphs by subsequently using these adding rules are more accurate. Moreover, the adding rules are added in the method, the auxiliary graphs can be added in the prefabricated graphs by subsequently using the adding rules, themethod is relatively quick in speed, convenient and simple, and the method meets double requirements on volume production, speed and precision.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular to a method for adding auxiliary graphics, an adding device, a storage medium and a processor. Background technique [0002] There are usually both densely distributed graphics (such as equally spaced 1;1 lines) and sparse graphics (such as independent lines) in a layout. Especially the design of logic devices has greater arbitrariness. Both theoretical and experimental results clearly show that the photolithography process window of densely distributed patterns is inconsistent with that of sparse patterns. Lighting conditions suitable for dense pattern exposures are not suitable for sparse pattern exposures. If there are both dense patterns and sparse patterns on the same mask, the common photolithography process window is small. [0003] And by observation, the lithography process window of dense lines (line: gap = 1:1) is larger than that of independent lines, and the l...

Claims

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Application Information

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IPC IPC(8): G03F1/38G06F17/50
CPCG03F1/38G06F30/392
Inventor 苏晓菁韦亚一张利斌
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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