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A kind of crystal growth device and crystal growth method

A technology of crystal growth and growth furnace, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of volatile components or impurities, pollution, affecting crystal quality and yield, etc.

Active Publication Date: 2021-05-04
安徽微芯长江半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] When the PVT method is used to grow SiC crystals, the high-temperature pretreatment of the raw materials is usually in the case of an axial temperature gradient in the growth chamber, which will cause the early unstable components or impurities to easily volatilize to the seeds if the treatment temperature is too high. The surface of the crystal will be polluted and destroyed, and if the treatment temperature is too low, the effect of removing impurities from the raw material will not be complete
In addition, a single slow or fast cooling and pressure drop is often selected in the seeding stage of cooling and pressure, which will easily lead to unstable and consistent volatile components deposited on the seed crystal, so that not only is it easy to form polytype inclusions but also aggregate on the growth interface. Thermal stress, which affects crystal quality and yield
SiC seed crystals are easily damaged in the early seeding stage of SiC crystal growth in the existing PVT method, and the thickness of the seed crystals must be controlled above 500 μm
However, the thickness of the large-size (especially 4 inches and above) commercial SiC wafers currently available on the market is 350 μm, which seriously restricts the preparation cycle of SiC crystals above 4 inches.

Method used

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  • A kind of crystal growth device and crystal growth method
  • A kind of crystal growth device and crystal growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] First, the graphite crucible with a diameter of 4 inches and a thickness of 400 μm seed crystal is fixed on the upper part, and the graphite crucible with silicon carbide raw material in the bottom material area is placed in the thermal insulation carbon felt (peripheral thermal insulation layer) (as a growth chamber). Place the above growth chamber in the crystal growth furnace, and pump the vacuum to 2.0×10 -4 Pa, filled with argon gas to a pressure of 10Torr, the upper insulation layer on the top of the furnace is slowly lowered until it covers the growth chamber through the lifting device on the furnace body, and the heating power is increased to 5kW to pretreat the raw materials for 3 hours, and then passed through the upper The pulling device slowly (1cm / min) pulls the insulation layer to the top of the growth furnace, and at the same time increases the heating power to 9.5kW and fills it with argon to 400Torr, keeps it for 3 hours, and then starts to lower the tem...

Embodiment 2

[0044] First, the upper part is fixed with a graphite cover with a diameter of 6 inches and a seed crystal thickness of 350 μm, and the graphite crucible with silicon carbide raw materials in the bottom material area is placed in an insulating carbon felt, and the above growth chamber is placed in a crystal growth furnace. Draw to 1.5×10 -4 Pa, filled with argon gas to a pressure of 200 Torr, slowly lower the insulation layer on the top until it covers the growth chamber through the lifting device on the furnace body, and at the same time increase the heating power to 8kW to pretreat the raw materials for 5 hours, and then pass the lifting device on the furnace body The pulling device slowly (0.5cm / min) pulls the upper insulation layer to the top of the growth furnace, and at the same time increases the heating power to 12.7kW and fills argon to 500Torr, and keeps it for 3.5 hours, and then starts to lower the temperature and pressure. First, the second The first stage took 0....

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Abstract

The invention relates to a crystal growth device and a crystal growth method. The crystal growth device comprises: a graphite crucible with a graphite top cover, wherein the bottom of the graphite crucible is used to place polycrystalline raw materials, and a graphite crucible is fixed on the side facing the bottom of the graphite top cover. crystal; wrapped around the outer circumference of the graphite crucible but exposing at least part of the outer peripheral insulation layer of the graphite top cover; the growth furnace, placing the graphite crucible wrapped with the outer peripheral insulation layer at the lower part of the growth furnace, and at the inner circumference of the lower part of the growth furnace A plurality of induction coils are provided for adjusting the temperature in the growth furnace, and the growth furnace also has a gas filling and deflation interface to selectively connect with a vacuum source or an inert gas source; a liftable upper insulation layer is set above the graphite crucible .

Description

technical field [0001] The invention relates to a crystal growth device and a crystal growth method, in particular to a method for protecting seed crystals during the seeding stage of crystal growth, in particular to a method for protecting seed crystals during the seeding stage of silicon carbide crystal growth based on a physical vapor transport method, belonging to silicon carbide material field. Background technique [0002] Silicon carbide (SiC) single crystal material has the advantages of large band gap, high thermal conductivity, high electron saturation drift rate, high critical breakdown electric field, low dielectric constant, and good chemical stability. High-frequency high-power devices and ideal semiconductor materials for power electronic devices are widely used in white light lighting, optical storage, screen display, aerospace, high-temperature radiation environment, oil exploration, automation, radar and communication, and automotive electronics. [0003] ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36
Inventor 高攀忻隽孔海宽刘学超施尔畏
Owner 安徽微芯长江半导体材料有限公司