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- - ODT Methods and memory system for optimizing on-die termination ODT settings of multi-ranks

A technology for storage controllers and storage devices, applied in the field of storage systems, capable of solving problems such as performance degradation of multi-block storage systems

Active Publication Date: 2019-10-08
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The characteristic deviation between storage devices will degrade the performance of multi-block storage system

Method used

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  • - - ODT Methods and memory system for optimizing on-die termination ODT settings of multi-ranks
  • - - ODT Methods and memory system for optimizing on-die termination ODT settings of multi-ranks
  • - - ODT Methods and memory system for optimizing on-die termination ODT settings of multi-ranks

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Embodiment Construction

[0021] Exemplary embodiments of the inventive concept will be described more fully hereinafter with reference to the accompanying drawings. Like reference numerals may refer to like elements throughout the drawings.

[0022] It should be understood that the terms "first", "second", "third", etc. are used herein to distinguish one element from another element, and these elements should not be limited by these terms. Thus, a "first" element in an example embodiment may be described as a "second" element in another example embodiment.

[0023] It should be understood that descriptions of features or aspects within each exemplary embodiment should typically be considered as available for other similar features or aspects in other exemplary embodiments, unless the context clearly dictates otherwise.

[0024] figure 1 is a block diagram illustrating a storage system 10 according to an exemplary embodiment.

[0025] refer to figure 1 , the storage system 10 may include a multi-bl...

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Abstract

A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state informationof the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.

Description

[0001] Cross References to Related Applications [0002] This application claims Korean Patent Application No. 10-2018-0035367 filed on March 27, 2018 with the Korean Intellectual Property Office and No. 10-2018-0132555 filed with the Korean Intellectual Property Office on October 31, 2018 Priority, the entire content of the above application is incorporated herein by reference in its entirety. technical field [0003] Exemplary embodiments of the inventive concept relate to memory systems, and more particularly to on-chip termination (termination) based on signal lines shared by multiple ranks in a multi-rank memory system (on- Dietermination, ODT) state information to optimize the ODT setting method of the signal line in the storage system. Background technique [0004] Mobile storage devices, such as Low Power Double Data Rate (LPDDR) Synchronous Dynamic Random Access Memory (SDRAM), are used in mobile electronic devices, such as smartphones, tablet PCs, laptop PCs, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/10
CPCG11C7/1057G11C7/1084G11C7/1048G06F13/4086G11C5/04G11C11/4093G06F13/1689Y02D10/00G11C7/222
Inventor 文大植河庆洙孙宁洙吴起硕李昶教张晋熏崔娟圭玄锡勋
Owner SAMSUNG ELECTRONICS CO LTD
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