Light emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light emitting diode epitaxial wafer comprises a substrate, a buffer layer, an N-type layer, an electronic adjustment layer, a multi-quantum well layer and a P-type layer, wherein the substrate, the buffer layer, the N-type layer, the electronic adjustment layer, the multi-quantum well layer and the P-type layer are stacked in sequence. The electronic adjustment layer is composed of a plurality of composite structures which are stacked insequence, and each composite structure is composed of a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer, wherein the first sub-layer, the second sub-layer, the third sub-layer and the fourth sub-layer are stacked in sequence. Each of the first sub-layer and the fourth sub-layer is a BAlN layer, and in the same composite structure, the content of a component B in the first sub-layer is greater than the content of a component B in the fourth sub-layer. The second sub-layer is an undoped GaN layer, and the third sub-layer is an undoped InGaN layer. According to the invention, the BAlN / GaN / InGaN / BAlN superlattice structure is additionally arranged between the N-type layer and the multi-quantum well layer, so that more electrons can be conveyed into the quantum well for composite luminescence.

Description

Technical field [0001] The invention relates to the field of semiconductor technology, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light emitting diode (English: Light Emitting Diode, abbreviated as: LED) is a semiconductor electronic component that can emit light. InGaN-based LEDs are considered to be a new generation of luminous light sources, with the advantages of high efficiency, low energy consumption, and long service life, and are expected to replace traditional incandescent and fluorescent lamps. [0003] The epitaxial wafer is the main component of the LED. The existing LED epitaxial wafer includes a substrate, a buffer layer, an N-type layer, a multiple quantum well layer, and a P-type layer stacked in sequence. The substrate is used for epitaxial growth to provide a growth surface, the buffer layer is used to provide a nucleation center for epitaxial growth, the multiple quantum well layer...

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Problems solved by technology

[0005] The effective mass of electrons is small, the thermal migration speed is fast, and it is easy to inject into the multi-quantum well layer, and even transition to the P-type layer, resulting in uneven distribution of electrons in the multi-quantum well layer, and it is easy to cause electron overflow , which ultimately reduces the luminous efficiency of the LED

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