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Ultra-broadband perfect absorber in mid-infrared band and preparation method thereof

An infrared band and ultra-broadband technology, applied in the field of wave absorbers, can solve the problems of narrow operating band, poor thermal stability, and low absorption efficiency of broadband absorbers, and achieve saving manpower and material resources, good thermal stability, and high absorption efficiency Effect

Active Publication Date: 2022-07-26
JIANGXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problems of narrow working band, low absorption efficiency, angle sensitivity and poor thermal stability of the broadband absorber prepared in the prior art, the present invention provides an ultra-broadband perfect absorber in the mid-infrared band and its preparation method

Method used

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  • Ultra-broadband perfect absorber in mid-infrared band and preparation method thereof
  • Ultra-broadband perfect absorber in mid-infrared band and preparation method thereof
  • Ultra-broadband perfect absorber in mid-infrared band and preparation method thereof

Examples

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preparation example Construction

[0036] The preparation method of the above-mentioned ultra-broadband perfect absorber in the mid-infrared band, comprising the following steps:

[0037] Step 1. Prepare clean glass pieces;

[0038] Step 2, coating, a layer of metal film is evaporated on the glass sheet in step 1 to form a base layer 1;

[0039] Step 3, coating, a layer of semiconductor material is evaporated on the base layer 1 in step 2 to form a non-metallic dielectric layer 2;

[0040] Step 4, laying metal nanostructures, and laying metal nanostructures on the non-metallic dielectric layer 2 in step 3 to form a metal absorption layer 3;

[0041] Step 5: Coating, vapor-depositing a layer of semiconductor material on the metal absorption layer 3 in Step 4 to form a top non-metallic anti-reflection layer 4 to obtain an ultra-broadband perfect absorber in the mid-infrared band.

[0042] In step 4, the inverse structure of the target structure is formed by spin coating photoresist on the surface of the non-met...

Embodiment 1

[0044] A kind of ultra-broadband perfect absorber in the mid-infrared band of the present embodiment is as follows:

[0045] Base layer 1, material is titanium, thickness h 3 = 300 nm;

[0046] Non-metallic dielectric layer 2, material is silicon dioxide, thickness h 2 = 50 nm;

[0047] Metal absorption layer 3, material is chromium, thickness h 1 = 70 nm;

[0048] Non-metallic anti-reflection layer 4, material is silicon dioxide, thickness h 4 = 200 nm;

[0049] Among them, the metal absorption layer 3 is formed by a periodic array of two nano-rings and two elliptical nano-disks, and the array period (P) is 400 nanometers; the outer radius (R) of the nano-ring is 160 nanometers, and the inner radius (r ) is 50 nm; the major semi-axis (D) of the elliptical nanodisk is 150 nm, and the minor semi-axis (d) is 60 nm.

[0050] figure 2 The absorption spectrum of the ultra-broadband perfect absorber in the infrared band in this example is shown. It can be clearly seen that ...

Embodiment 2

[0053] On the basis of Example 1, the non-metallic anti-reflection layer 4 is removed, and the others are the same as Example 1. That is, the thickness of the non-metallic anti-reflection layer 4 is 0 nm.

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Abstract

The invention provides an ultra-wideband perfect absorber in the mid-infrared band and a preparation method thereof. The absorber is sequentially provided with a base layer, a non-metallic dielectric layer, a metal absorption layer and a non-metallic anti-reflection layer from bottom to top. The metal dielectric layer is connected to the upper surface of the base layer. The metal absorption layer is composed of a plurality of metal absorption units, and the absorber has the advantages of high absorption efficiency, insensitivity to angle, wide operating band and good thermal stability, and surpasses the traditional absorber in performance.

Description

technical field [0001] The invention relates to the technical field of wave absorbers, in particular to an ultra-wideband perfect absorber in the mid-infrared band and a preparation method thereof. Background technique [0002] With the rapid development of modern science and technology, broadband perfect absorbers have always been a hot topic in the field of science and technology; especially broadband absorption in the visible and infrared bands, because of its importance in the fields of solar energy collection, infrared detection, information sensing, and photothermal utilization. The application requirements have received widespread attention. [0003] In recent years, a variety of absorbing structures have been designed, such as planar metal / dielectric structures, reflective metal grating structures, metamaterial structures, and surface plasmon-based structures. There are many schemes to achieve full absorption based on the plasmonic metamaterial system. The metal par...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/00G02B1/113C23C14/35C23C14/30C23C14/24C23C14/18C23C14/10
CPCG02B5/003G02B1/113C23C14/24C23C14/18C23C14/30C23C14/10C23C14/35C23C14/185
Inventor 刘正奇唐鹏柳叶刘桂强刘晓山付国兰
Owner JIANGXI NORMAL UNIV
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