Formation method of three-dimensional memory
A memory, three-dimensional technology, applied in the direction of semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of top layer selection gate tangent depression, affecting the performance of three-dimensional memory, etc., to reduce the number of mask layers and etching times, and reduce the process Cost, the effect of simplifying the process
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[0037] The technical solution of the present invention will be further described in detail below in conjunction with the drawings and specific embodiments of the description. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.
[0038] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use inaccurate scales, which are only used to facilitate and clearly assis...
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