Unlock instant, AI-driven research and patent intelligence for your innovation.

Driving circuit for MOSFET driving

A technology of driving circuit and switching circuit, applied in the electrical field, can solve the problems of slow response speed and high cost of MOSFET, and achieve the effect of saving cost and simplifying circuit structure

Pending Publication Date: 2019-11-01
ZHEJIANG YAT ELECTRICAL APPLIANCE CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The drive circuit contains 4 triodes, the cost is high, and the response speed of the MOSFET is slow

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Driving circuit for MOSFET driving
  • Driving circuit for MOSFET driving
  • Driving circuit for MOSFET driving

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings, but the present invention is not limited to these embodiments.

[0022] The basic idea of ​​this embodiment is to connect the switch circuit to the gate of the MOSFET. When the switch circuit is turned on, the gate voltage of the MOSFET can be quickly pulled to the common ground voltage, so that the MOSFET can be disconnected quickly, and the circuit structure is simplified at the same time. Only one triode is needed to drive the MOSFET, which saves the cost.

[0023] Based on the above idea, an embodiment of the present invention proposes a driving circuit for MOSFET driving, such as figure 2 As shown, including: switch circuit and voltage divider circuit;

[0024] The first terminal of the switch circuit is connected to the first control terminal, the second terminal is connected to the voltage divider circuit, and the third terminal is con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the electrical field and particularly relates to a driving circuit for MOSFET driving. The driving circuit includes a switch circuit and a voltage division circuit, wherein afirst end of the switch circuit is connected with a first control end, a second end is connected with the voltage division circuit, a third end is connected with a common ground, the switch circuit isused for leading a gate voltage of an MOSFET to a common ground voltage when the switch circuit is turned on; a first end of the voltage division circuit is connected with a second control end and the switch circuit, a second end is connected with a gate of the MOSFET, a third end is connected with the common ground, and the voltage division circuit is used for increasing the gate voltage of theMOSFET to driving the MOSFET when the switch circuit is turned off. The driving circuit is advantaged in that 1, when the switch circuit is turned on, the gate voltage of the MOSFET can be rapidly ledto the common ground voltage, and rapid turn off of the MOSFET is achieved; and 2, the circuit structure is further simplified, driving of the MOSFET can be achieved only through a triode, and the cost is saved.

Description

technical field [0001] The invention relates to the electrical field, in particular to a driving circuit for MOSFET driving. Background technique [0002] Metal-Oxide Semiconductor Field-Effect Transistor, referred to as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), is a field-effect transistor (field-effect transistor) that can be widely used in analog circuits and digital circuits ). According to the polarity of its "channel" (working carrier), MOSFET can be divided into two types: "N-type" and "P-type", which are usually called NMOSFET and PMOSFET. Other abbreviations include NMOS, PMOS, etc. . [0003] Due to the advantages of small size, light weight and high efficiency, switching power supply has become more and more popular. Due to the advantages of fast switching speed, easy parallel connection, and low driving power required, MOSFET has become one of the most commonly used power switching devices for switching power supplies. The quality of the dri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02M1/08
CPCH02M1/08
Inventor 沈雪欢周超何志强
Owner ZHEJIANG YAT ELECTRICAL APPLIANCE CO LTD