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Method for preparing color film array substrate and color film array substrate

An array substrate and color film technology, applied in nonlinear optics, instruments, optics, etc., can solve the problem of low aperture ratio, achieve the effect of increasing the aperture ratio, avoiding the need for apertures, and reducing the difficulty of development

Inactive Publication Date: 2019-11-08
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The embodiment of the present application provides a method for preparing a color filter array substrate and the color filter array substrate, so as to solve the technical problem of the low aperture ratio of the existing method for preparing a color filter array substrate

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  • Method for preparing color film array substrate and color film array substrate
  • Method for preparing color film array substrate and color film array substrate
  • Method for preparing color film array substrate and color film array substrate

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preparation example Construction

[0052] An embodiment of the present application provides a method for preparing a color filter array substrate, which includes the following steps:

[0053] S1: providing a substrate;

[0054] S2: forming a thin film transistor array structure layer on the substrate, the thin film transistor array structure layer including a source-drain metal layer;

[0055] S3: forming a protection layer on the thin film transistor array structure layer;

[0056] S4: forming a color resist layer on the protective layer;

[0057] S5: forming a flat layer on the color resist layer;

[0058] S6: forming an opening structure on the flat layer, the color resistance layer and the protective layer, the opening structure simultaneously penetrates the flat layer, the color resistance layer and the protective layer and exposes the source and drain metal Floor;

[0059] S7: forming a transparent conductive layer on the planar layer, the transparent conductive layer covers the opening structure and ...

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Abstract

The application provides a method for preparing a color film array substrate and the color film array substrate. The method for preparing the color film array substrate includes the following steps: afilm transistor array structural layer is formed on a substrate; a protective layer is formed on the film transistor array structural layer; a color resistance layer is formed on the protective layer; a flat layer is formed on the color resistance layer; an aperture structure is formed on the flat layer, the color resistance layer and the protective layer, and the aperture structure penetrates through the flat layer, the color resistance layer and the protective layer, and exposes a drain source metal layer; and a transparent conducting layer is formed on the flat layer, the transparent conducting layer covers the aperture structure and is electrically connected with the drain source metal layer. An aperture is not formed on the color resistance layer during a production process of the color resistance layer, and an aperture is formed after the flat layer is produced to penetrate through the flat layer, the color resistance layer and the protective layer to form the aperture structure. Such arrangement avoids the need for forming an aperture on the color resistance layer and reduces the developing difficulty of the color resistance layer on one hand, and improves the aperture opening ratio of the product on the other hand.

Description

technical field [0001] The present application relates to a display technology, in particular to a method for preparing a color filter array substrate and the color filter array substrate. Background technique [0002] COA (Color-filter on Array) technology is an integrated technology that directly fabricates a color filter layer on an array substrate. It can effectively solve problems such as light leakage caused by alignment deviation in the cell alignment process of the liquid crystal display device, and can significantly increase the display aperture ratio. During the production process, the COA technology requires opening holes in the color resistance layer so that the uppermost pixel electrode can conduct with the metal layer of the thin film transistor array structure layer in the lower layer of the color resistance. [0003] In the prior art, it is generally required to use an exposure process to open holes when preparing the color resist layer. However, considerin...

Claims

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Application Information

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IPC IPC(8): G02F1/1362
CPCG02F1/1362G02F1/136222G02F1/136227G02F1/1368
Inventor 于承忠
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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