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Quantum dot light-emitting diode and its preparation method

A quantum dot light-emitting and diode technology, which is used in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of angle dependence of light, and achieve the advantages of reducing angle dependence, simple and easy process, and convenient operation. Effect

Active Publication Date: 2021-03-02
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, provide a quantum dot light-emitting diode and its preparation method, aiming at solving the technical problem of the angle dependence of light emission in the existing QLED devices

Method used

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  • Quantum dot light-emitting diode and its preparation method

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preparation example Construction

[0027] On the other hand, an embodiment of the present invention provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0028] S01: Provide the substrate;

[0029] S02: Prepare an optical buffer layer on the substrate, the optical buffer layer has a refractive index of 1.5-1.9;

[0030] S03: preparing a bottom electrode on the optical buffer layer;

[0031] S04: preparing a quantum dot light-emitting layer on the bottom electrode;

[0032] S05: Prepare a top electrode on the quantum dot light-emitting layer.

[0033] The preparation method of the quantum dot light-emitting diode provided by the embodiment of the present invention has a simple process and is convenient for operation. It prepares an optical buffer layer with a refractive index of 1.5-1.9 between the substrate and the bottom electrode, and the optical buffer layer will When the optical path of different lights is increased so that the optical path difference is far ...

Embodiment 1

[0051] A QLED device with reduced angle dependence, whose structure is as follows figure 1 As shown, it includes from bottom to top: glass (mark 1 in the figure) / optical buffer layer (mark 2 in the figure) / ITO (mark 3 in the figure) / TFB (mark 4 in the figure) / QD (mark 5 in the figure) ) / ZnO (mark 6 in the figure) / Ag (mark 7 in the figure); wherein, the optical buffer layer includes (9%) B 2 o 3 -(15.8%)Al 2 o 3 -(59%) SiO2 2 - (16.2%) CaO.

[0052] The preparation method of the QLED device comprises the following steps:

[0053] 1. Place the glass substrate (glass) in acetone, lotion, deionized water and isopropanol in sequence for ultrasonic cleaning. Each step of ultrasonic cleaning needs to last for about 15 minutes. After the ultrasound is completed, place it in a clean oven to dry for later use.

[0054] 2. After the glass substrate is dried, print an optical buffer layer on it by sputtering screen printing: (9%) B 2 o 3 -(15.8%)Al 2 o 3 -(59%) SiO2 2 - (16.2%...

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Abstract

The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. A quantum dot light-emitting diode, comprising a bottom electrode, a top electrode, and a quantum dot light-emitting layer arranged between the bottom electrode and the top electrode, the bottom electrode is arranged on a substrate, and the bottom electrode and the substrate are An optical buffer layer is provided, and the refractive index of the optical buffer layer is 1.5-1.9. After the optical buffer layer with a refractive index between 1.5-1.9 is added in the present invention, the optical path of different lights will be increased, so that when the optical path difference is far greater than the spectral wavelength, the increase or decrease of diffraction will not occur Conditions, so that the different angles of the device are the original light wavelengths, thereby reducing the angle dependence of light.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Semiconductor quantum dots have size-tunable optoelectronic properties and have been widely used in light-emitting diodes, solar cells, and bioluminescent labels. After more than 20 years of development of quantum dot synthesis technology, people have been able to synthesize various high-quality nanomaterials, and their photoluminescence efficiency can reach more than 85%. Quantum dot light-emitting diodes (QLEDs) with quantum dots as the light-emitting layer are a promising next-generation display and Solid state lighting source. Quantum dot light-emitting diodes (QLEDs) have attracted extensive attention and research in the fields of lighting and display in recent years due to their many advantages such as high brightness, low power consumption, wide color gamut, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/50H01L51/56
CPCH10K50/115H10K50/85H10K71/00
Inventor 刘佳曹蔚然
Owner TCL CORPORATION
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