Thermal field crucible with thermal insulation structure and for polycrstalling silicon, and using method thereof

Abstract

The invention discloses a thermal field crucible with a thermal insulation structure and for polycrstalling silicon. The thermal field crucible comprises a thermal insulation cylinder top seat and a thermal insulation cylinder outer shell, the thermal insulation cylinder top seat is arranged above the thermal insulation cylinder outer shell, fixing hand rings are arranged at two ends of the thermal insulation cylinder top seat, a control valve is arranged at the top end of the thermal insulation cylinder top seat, a pyrometer is arranged at the lower left portion of the control valve, a pressure measuring opening is arranged at the lower right portion of the control valve, and a shaft coupling is arranged at a position, located in the thermal insulation cylinder top seat, below the controlvalve. The invention further discloses a using method of the thermal field crucible with the thermal insulation structure and for the polycrystalline silicon. The thermal field crucible solves the problem of poor thermal insulation performance of an original thermal field crucible free from the thermal insulation structure, reduces the energy consumption in the production process due to the arranged thermal insulation property, achieves uniform heating by adopting rotary heating, and also can reduce the consumption of materials and energy and reduce the production cost of the product, so thecompetitiveness is improved.

Description

technical field [0001] The invention belongs to the technical field of hot-field crucibles for multi-product silicon, and in particular relates to a hot-field crucible with a thermal insulation structure for multi-product silicon and a use method thereof. Background technique [0002] Polycrystalline silicon is a form of elemental silicon. When molten elemental silicon solidifies under supercooled conditions, silicon atoms are arranged in the form of diamond lattices to form many crystal nuclei. If these nuclei grow into crystal grains with different crystal plane orientations, these The grains combine to crystallize into polysilicon. [0003] At present, the demand for polysilicon mainly comes from semiconductors and solar cells. Due to the backward preparation process, the production of similar products consumes too much material and electricity, and there are many three wastes. Compared with the international level, domestic polysilicon production consumes more than twice...

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Problems solved by technology

[0003] At present, the demand for polysilicon mainly comes from semiconductors and solar cells. Due to the backward preparation process, the production of similar products consumes too much material and electricity, and there are many three wastes. Compared with the international level, domestic polysilicon production consumes more than twice as much material and energy consumption. , the product cost is not competitive. Due to the poor thermal insulation performance of the hot field crucible, it leads to more power consumption, and it cannot be heated evenly during the heating process, resulting in high material consumption and energy consumption, which increases production costs and lacks competitiveness.

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