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A kind of exposure system, exposure method and photolithography machine

An exposure system and exposure method technology, applied in the field of semiconductor projection lithography, can solve problems such as poor imaging quality of lithography machines, achieve the effects of correcting aberrations, increasing optical design variables, and improving imaging quality

Active Publication Date: 2021-07-02
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The object of the present invention is to provide an exposure system, exposure method and lithography machine to solve the problem of poor imaging quality of the existing exposure system, exposure method and lithography machine

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  • A kind of exposure system, exposure method and photolithography machine
  • A kind of exposure system, exposure method and photolithography machine
  • A kind of exposure system, exposure method and photolithography machine

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Embodiment Construction

[0059] The exposure system, exposure method and photolithography machine proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0060] This embodiment provides an exposure system. refer to figure 1 , figure 1 It is a structural schematic diagram of an exposure system in an embodiment of the present invention. The exposure system includes an illumination unit 010 , a reticle 020 , a projection objective lens unit 030 , a silicon wafer 040 and at least one diffractive optical element 050 . Wherein, the illuminating unit 010 is used to provide an illuminating ligh...

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Abstract

The present invention provides an exposure system, an exposure method and a lithography machine used in the technical field of semiconductor projection lithography, including an illumination unit, a reticle, a projection objective lens unit, a substrate and at least one diffractive optical element, and the diffractive optical element is arranged on In the lighting unit and / or the projection objective unit, the diffractive optical element is arranged at a position close to or far from the diaphragm in the lighting unit, and / or part of the diffractive optical element It is arranged at a position in the projection objective lens unit that is close to or far from the diaphragm in the projection objective lens unit, and the illumination beam provided by the illumination unit is sequentially incident on the reticle, the projection objective lens unit and the substrate, The pattern on the reticle is imaged onto the substrate. The exposure system, exposure method and photolithography machine can effectively correct the aberration of the exposure system, thereby improving the image quality.

Description

technical field [0001] The invention relates to the technical field of semiconductor projection lithography, in particular to an exposure system, an exposure method and a lithography machine. Background technique [0002] In the field of semiconductor projection lithography technology, optical performance correction is the key to improving the imaging quality of projection exposure systems. [0003] In the traditional semiconductor projection lithography technology field, the optical performance correction of the projection exposure system is usually realized by adjusting the curvature, thickness, material refractive index and dispersion of the optical lens and other variables. For example, aberrations are corrected with lenses made of materials with a high refractive index. In the field of semiconductor projection lithography technology, high refractive index material refers to the refractive index N i >1.57 material. There are two common high refractive index materia...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/7015G03F7/70316
Inventor 郭银章
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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