Semiconductor element and manufacturing method thereof
A semiconductor and component technology, applied in the field of making dynamic random access memory components
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[0027] Please refer to Figure 1 to Figure 8 , Figure 1 to Figure 8 A schematic diagram of a method for making a dynamic random access memory element according to an embodiment of the present invention, wherein figure 1 Make the top diagram of a DRAM dynamic random access memory element for the present invention, Figure 2 to Figure 4 for figure 1 Schematic diagram of the method for fabricating dynamic random access memory elements along the tangent line AA' in , Figure 5 to Figure 7 for figure 1 Schematic diagram of the method for fabricating dynamic random access memory elements along the tangent line BB' in , Figure 8 then figure 1 The enlarged top view of a part located between two adjacent bit line structures in .
[0028] This embodiment provides a memory element, such as a DRAM element 10 with a recessed gate, which includes at least one transistor element (not shown) and at least one capacitor structure (not shown), so as to As the smallest constituent unit i...
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