Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor element and manufacturing method thereof

A semiconductor and component technology, applied in the field of making dynamic random access memory components

Active Publication Date: 2019-12-17
UNITED MICROELECTRONICS CORP +1
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, limited by the manufacturing process technology, there are still many defects in the existing DRAM cells with recessed gate structures, which need to be further improved to effectively improve the performance and reliability of related memory components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Please refer to Figure 1 to Figure 8 , Figure 1 to Figure 8 A schematic diagram of a method for making a dynamic random access memory element according to an embodiment of the present invention, wherein figure 1 Make the top diagram of a DRAM dynamic random access memory element for the present invention, Figure 2 to Figure 4 for figure 1 Schematic diagram of the method for fabricating dynamic random access memory elements along the tangent line AA' in , Figure 5 to Figure 7 for figure 1 Schematic diagram of the method for fabricating dynamic random access memory elements along the tangent line BB' in , Figure 8 then figure 1 The enlarged top view of a part located between two adjacent bit line structures in .

[0028] This embodiment provides a memory element, such as a DRAM element 10 with a recessed gate, which includes at least one transistor element (not shown) and at least one capacitor structure (not shown), so as to As the smallest constituent unit i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor element and a manufacturing method thereof. The method for manufacturing the semiconductor element mainly comprises the steps of firstly, forming a first bit line structure on a substrate, forming a first gap wall beside the first bit line structure, forming an interlayer dielectric layer beside the first gap wall, removing part of the interlayer dielectriclayer and part of the first gap wall and exposing the side wall of the first bit line structure, and then forming a first storage node contact isolation structure beside the first bit line structure,wherein the first storage node contact isolation structure is directly contacted with the first bit line structure and the first gap wall.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor element, in particular to a method for manufacturing a Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) element. Background technique [0002] With the trend of miniaturization of various electronic products, the design of dynamic random access memory (DRAM) cells must also meet the requirements of high integration and high density. For a DRAM cell with a recessed gate structure, since it can obtain a longer carrier channel length in the same semiconductor substrate to reduce the leakage of the capacitor structure, it is under the current mainstream development trend , which has gradually replaced DRAM cells with only planar gate structures. [0003] Generally, a DRAM cell with a recessed gate structure includes a transistor element and a charge storage device for receiving voltage signals from bit lines and word lines. However, due to the limitation of manufacturing...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8242H01L27/108H10B12/00
CPCH10B12/30H10B12/09H10B12/50H10B12/315H10B12/0335H10B12/482H01L21/762H10B12/485H10B12/488
Inventor 吴柏翰李甫哲蔡建成刘姿岑吕文杰
Owner UNITED MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com