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Light-emitting element and manufacturing method therefor

A technology of light-emitting components and manufacturing methods, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve problems such as the reduction of light extraction efficiency, and achieve the effect of improving light extraction efficiency

Pending Publication Date: 2019-12-17
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this case, in the semiconductor part and SiO 2 Reflection occurs between layers, and there is a disadvantage that the light extraction efficiency toward the transparent substrate side decreases

Method used

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  • Light-emitting element and manufacturing method therefor
  • Light-emitting element and manufacturing method therefor
  • Light-emitting element and manufacturing method therefor

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0062] Light-emitting component of the first embodiment

[0063] First, a light emitting module according to a first embodiment of the present invention will be described.

[0064] Figure 10 A schematic diagram showing the light-emitting component 1000 of the present invention before scribing.

[0065] Such as Figure 10 As shown, in the light-emitting module of the first embodiment of the present invention, the transparent substrate as the window layer and supporting substrate 120 made of GaP, GaAsP, sapphire, etc. is formed on the surface of the transparent substrate (window layer and supporting substrate 120). The second dielectric film 122 having a thickness of 0.05 to 1.0 μm and the first dielectric film 112 having the same thickness of 0.05 to 1.0 μm are formed. As the dielectric film, SiO can be used 2 or SiN x .

[0066] On the first dielectric film 112, an antireflection layer 111 (AR layer) having a function of preventing light reflection is arranged.

[0067...

Embodiment 1

[0134] will be like Figure 10 The light-emitting components before scribing are scribed to manufacture 10,000 light-emitting components. Specifically, on the window layer and supporting substrate made of GaP, a layer made of SiO 2 The formed second dielectric film with a thickness of 0.5 μm is also made of SiO 2 The formed first dielectric film with a thickness of 0.5 μm and the TiO 2 (refractive index: 2.493), further forming a light-emitting portion, the light-emitting portion sequentially includes a current diffusion layer made of AlGaAs with a thickness of 1.0 μm, an intermediate composition layer made of AlInP with a thickness of 0.5 μm, A p-type second semiconductor layer with a thickness of 1.0 μm, an active layer with a thickness of 0.5 μm, and an n-type first semiconductor layer with a thickness of 1.0 μm are made of AlGaInP. Furthermore, it has the removed part from which the active layer and the 1st semiconductor layer of the 1st conductivity type were removed, ...

Embodiment 2

[0137] will be like Figure 20 The light-emitting components shown before scribing were scribed, and 10,000 light-emitting components were manufactured. Specifically, on the window layer and supporting substrate made of GaP, a layer made of SiO 2 The formed second dielectric film with a thickness of 0.5 μm is also made of SiO 2 The formed first dielectric film with a thickness of 0.5 μm and the TiO 2 The resulting antireflection layer is further formed with a light-emitting portion, which sequentially includes a current diffusion layer made of AlGaAs with a thickness of 1.0 μm, an intermediate composition layer made of AlInP with a thickness of 0.5 μm, and a current diffusion layer made of AlGaInP. A p-type second semiconductor layer with a thickness of 1.0 μm, an active layer with a thickness of 0.5 μm, and an n-type first semiconductor layer with a thickness of 1.0 μm, further, remove the active layer and the first semiconductor layer of the first conductivity type. parts...

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Abstract

The purpose of the present invention is to provide a light-emitting element which is manufactured by bonding a window layer and a support substrate with a dielectric film such as a SiO2 layer and removing a starting substrate, and which has improved light extraction efficiency; and a method for manufacturing the light-emitting element. A light-emitting element according to the present invention includes a window layer / support substrate and a light-emitting portion, the light-emitting portion including, in order, a second semiconductor layer of a second conductivity type, an active layer, and afirst semiconductor layer of a first conductivity type provided on the window layer / support substrate, the light-emitting element including: a removal portion for removing at least the first semiconductor layer and the active layer; a non-removal part other than the removal part; a first ohm electrode provided in the non-removal part; and a second ohmic electrode provided in the removal part, inwhich the window layer / support substrate and the light-emitting part are joined by a dielectric film, and a reflection prevention layer is provided between the light-emitting part and the dielectric film.

Description

technical field [0001] The invention relates to a light-emitting component and a manufacturing method of the light-emitting component. Background technique [0002] Products such as chip-on-board (COB) are adopted as LED chip mounting methods for applications such as lighting because of their excellent heat dissipation from LED components. When LEDs are mounted on a COB or the like, flip-chip mounting in which chips are directly bonded to a substrate is required. In order to implement flip-chip mounting, it is necessary to fabricate a flip-chip in which pads for conducting electricity with different polarities are provided on one surface of the light-emitting module. In addition, the surface on the opposite side to the surface on which the conduction pad is provided must be made of a material having a light extraction function. [0003] In the case of making a flip chip with yellow to red LEDs, an AlGaInP-based material is used for the light-emitting layer. Since AlGaInP-...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/30H01L33/36H01L33/46
CPCH01L33/46H01L33/36H01L33/30H01L33/0062
Inventor 石崎顺也
Owner SHIN-ETSU HANDOTAI CO LTD