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Bonding material and bonded body using same

A technology of bonding materials and bonding bodies, applied in nanotechnology for materials and surface science, printed circuits connected with non-printed electrical components, electrical solid devices, etc., can solve difficult problems such as lead-free

Inactive Publication Date: 2019-12-17
DOWA ELECTRONICS MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the operating temperature of a semiconductor device that mounts a SiC chip on a substrate may exceed 200°C, a high-temperature solder with a high melting point is required as the solder for fixing the SiC chip on the substrate. Difficult to lead-free

Method used

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  • Bonding material and bonded body using same
  • Bonding material and bonded body using same
  • Bonding material and bonded body using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 180.0 g of pure water was placed in a 300 mL beaker, and 33.6 g of silver nitrate (manufactured by Toyo Kagaku Co., Ltd.) was added and dissolved to prepare a silver nitrate aqueous solution as a raw material liquid.

[0033] Moreover, 3322.0 g of pure water was put into a 5L beaker, and it heated up to 40 degreeC, blowing nitrogen gas into this pure water for 30 minutes, and removing dissolved oxygen. After adding 44.8 g of sorbic acid (manufactured by Wako Pure Chemical Industry Co., Ltd. (Wako Pure Chemical Industry Co., Ltd.)) as an organic compound (for coating silver particles) to this pure water, add 28% ammonia water ( Wako Pure Chemical Industries, Ltd.) 7.1 g.

[0034] While stirring the aqueous solution after adding the ammonia water, 14.91 g of aqueous hydrazine (manufactured by Otsuka Chemical Co., Ltd.) with a purity of 80% was added as a reducing agent after 5 minutes from the time point of adding the ammonia water (when the reaction started), Prepare an...

Embodiment 2

[0046] 180.0 g of pure water was placed in a 300 mL beaker, and 33.6 g of silver nitrate (manufactured by Toyo Kagaku Co., Ltd.) was added and dissolved to prepare a silver nitrate aqueous solution as a raw material liquid.

[0047] Moreover, 3322.0 g of pure water was put into a 5 L beaker, and it heated up to 60 degreeC, blowing nitrogen gas into this pure water for 30 minutes, and removing dissolved oxygen. After adding 44.8 g of sorbic acid (manufactured by Wako Pure Chemical Industry Co., Ltd. (Wako Pure Chemical Industry Co., Ltd.)) as an organic compound (for coating silver particles) to this pure water, add 28% ammonia water ( Wako Pure Chemical Industries, Ltd.) 7.1 g.

[0048] While stirring the aqueous solution after adding the ammonia water, 14.91 g of aqueous hydrazine (manufactured by Otsuka Chemical Co., Ltd.) with a purity of 80% was added as a reducing agent after 5 minutes from the time point of adding the ammonia water (when the reaction started), Prepare a...

Embodiment 3

[0055] Except that the same (average primary particle diameter of 60nm) silver particle (silver particle 2) and (average primary particle diameter of 300nm) silver particle (silver particle 3) and the amount of the first solvent (ODO) are respectively 46.5 g, 46.5g and 6.25g, by the same method as in Example 2, the first solvent (ODO) containing 46.5% by mass of silver particles 2, 46.5% by mass of silver particles 3, 6.25% by mass, 0.5% by mass The bonding material 3 is composed of the silver paste of the second solvent (IPTL-A) and 0.25% by mass of the dispersant (BEA).

[0056] For this bonding material 3, the viscosity, Ti value, Ag concentration, and particle size were obtained by the same method as in Example 1. As a result, the viscosity measured at 5 rpm at 25°C was 40 (Pa·s), and the Ti value was 5.4, and the Ag concentration was 92.1% by mass. In addition, the first scratch is 1 μm or less, the fourth scratch is 1 μm or less, and the average particle diameter D 50 ...

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Abstract

The present invention provides a bonding material capable of bonding an electronic component to a substrate with a silver bonding layer in which large cracks are unlikely to form even when being subjected to repeated cooling and heating cycles; and a bonded body obtained by bonding the electronic component to the substrate using the bonding material. The bonded body is configured so that, as an electronic component, a semiconductor chip such as an SiC chip (the bonding surface of which is silver-plated) is bonded to a copper substrate via a silver bonding layer containing a silver sintered body, wherein the shear strength of the silver bonding layer is 60 MPa or more and the crystallite diameter in plane (111) of the silver bonding layer is 78 nm or less.

Description

technical field [0001] The present invention relates to a bonding material and a bonded body using the bonding material, and more particularly to a bonding material composed of a silver paste containing silver particles and a bonded body in which an electronic component and a substrate are bonded using a silver bonding layer formed using the bonding material. Background technique [0002] Conventionally, in a semiconductor device in which electronic components such as semiconductor chips are mounted on a metal substrate such as a copper substrate, the electronic components are fixed on the substrate by solder. Lead solder is gradually converted to lead-free solder. [0003] In addition, as a semiconductor chip of such a semiconductor device, use of a SiC chip, which has lower loss than a widely used Si chip and has excellent characteristics, has been considered. However, since the operating temperature of a semiconductor device that mounts a SiC chip on a substrate may exce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F7/04B22F1/00B22F1/02B22F3/14B22F7/08B22F9/00B82Y30/00H05K1/18B22F9/24B22F1/054B22F1/0545B22F1/102B22F1/103B22F1/17
CPCB22F9/24B82Y30/00H05K1/18B22F7/064H01L24/29H01L24/83H01L2924/10272H01L2224/8384H01L2224/05639H01L2224/83447H01L2224/32245H01L24/32H01L24/05H01L2224/04026H01L2224/83204H01L2224/29339H01L2224/05644H01L2224/05664H01L2224/29294H01L2224/2949H01L2224/83192H01L2224/27848H01L24/27H01L2224/2732H01L2224/27005B22F1/0545B22F1/103B22F1/102B22F1/054B22F1/17H01L2924/3512H01L2924/00014H01L2924/00012B22F7/04B22F7/08B22F3/14B22F2301/255H01L23/49582H01L29/1608H01L2224/29139
Inventor 堀达朗远藤圭一藤本英幸栗田哲
Owner DOWA ELECTRONICS MATERIALS CO LTD