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A nanometer cold cathode electron source with a double ring gate structure and its manufacturing method

A cold cathode and electron source technology, applied in cold cathode manufacturing, electrode system manufacturing, discharge tube/lamp manufacturing, etc., can solve the problems of low field emission current of nano-cold cathodes, inability to manufacture in large areas, poor gate control characteristics, etc. , to achieve the effect of realizing large-area production, reducing electrode lead layout, and reducing the possibility of

Active Publication Date: 2020-08-04
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the bottom grid electrode strips in the above two nano cold cathode electron source structures only serve as electrical connections, so there is only a single planar control grid structure, which has poor gate control characteristics in practical applications. The problem of low field emission current and high driving voltage
If you want to further increase the field emission current and enhance the control effect on the cold cathode current on the basis of this structure, you need to make multiple control grids, which is difficult to make, high in cost, and cannot be made in a large area.

Method used

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  • A nanometer cold cathode electron source with a double ring gate structure and its manufacturing method
  • A nanometer cold cathode electron source with a double ring gate structure and its manufacturing method
  • A nanometer cold cathode electron source with a double ring gate structure and its manufacturing method

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Embodiment 1

[0047] In this example, a ZnO nanometer cold cathode electron source is prepared.

[0048] like Figure 1-Figure 3 As shown, the nano-cold cathode electron source of double-ring gate structure of the present invention comprises substrate 1, the bottom section annular gate electrode 2 and bottom cathode electrode 3 that are arranged on substrate 1, insulating layer 4, etched through hole 5. Top ring-shaped gate electrode 6, top cathode electrode 7, growth source film 8 and nanowire cold cathode 9.

[0049] The bottom segmented ring-shaped gate electrode 2 is a segmented and discontinuous ring-shaped electrode structure, which surrounds the bottom cathode electrode 3 , and the outer leads of the bottom segmented ring-shaped gate electrode 2 and the bottom cathode electrode 3 are arranged vertically. The insulating layer 4 covers the bottom section ring-shaped gate electrode 2 and the bottom cathode electrode 3, and the insulation layer 4 is etched with several etching through h...

Embodiment 2

[0059] In this embodiment, a CuO nanometer cold cathode electron source is prepared.

[0060] Clean and dry the substrate 1; the substrate 1 is a large-area glass substrate. On the substrate 1, make the bottom section ring-shaped grid electrode 2 and the bottom cathode electrode 3; the conductive film IZO as the bottom section ring-shaped grid electrode 2 and the bottom cathode electrode 3, the conductive film is passed through the magnetron Prepared by sputtering, UV lithography and etching processes. The thickness of the conductive film is 0.1 μm.

[0061] An insulating layer 4 is deposited on the bottom segmented annular gate electrode 2 and the bottom cathode electrode 3 . The insulating film used as the insulating layer 4 is silicon dioxide material, and the insulating layer 4 is prepared by chemical vapor deposition.

[0062] Localized etching of the insulating layer 4 on the insulating layer 4 results in etched vias 5 for connecting the top cathode electrode 7 with t...

Embodiment 3

[0067] In this embodiment, a TiO nanometer cold cathode electron source is prepared.

[0068] Clean and dry the substrate 1; the substrate 1 is a large-area glass substrate. On the substrate 1, make the bottom section ring-shaped grid electrode 2 and the bottom cathode electrode 3; the conductive film as the bottom section ring-shaped grid electrode 2 and the bottom cathode electrode 3 is AZO, and the conductive film is passed through magnetic Controlled sputtering, UV lithography and etching processes. The thickness of the conductive film is 2 μm.

[0069] An insulating layer 4 is deposited on the bottom segmented annular gate electrode 2 and the bottom cathode electrode 3 . The insulating film used as the insulating layer 4 is silicon dioxide material, and the insulating layer 4 is prepared by chemical vapor deposition.

[0070] Localized etching of the insulating layer 4 on the insulating layer 4 results in etched vias 5 for connecting the top cathode electrode 7 with th...

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Abstract

The present invention discloses a nano cold cathode electron source with a dual gate-all-around structure, which comprises a substrate, an insulating layer, a bottom cathode electrode, a bottom segmented ring-shaped gate electrode, etched through holes, a top cathode electrode, a top ring-shaped gate electrode, a growth source film and a nanowire cold cathode. The top ring-shaped gate electrode isrespectively connected with the bottom segmented ring-shaped gate electrode through the etched through holes. A method for preparing the nano cold cathode electron source with the dual gate-all-around structure is also disclosed and comprises the following steps: the bottom cathode electrode, the bottom segmented ring-shaped gate electrode, the insulating layer, the etched through holes, the topcathode electrode and the top ring-shaped gate electrode are manufactured; the growth source film is deposited; and the nanowire cold cathode grows through thermal oxidation. The nano cold cathode electron source has the strong grid-controlled electron emission capability and the row-and-column addressable dual gate-all-around structure.

Description

technical field [0001] The invention relates to the technical field of vacuum microelectronic devices, in particular to a nanometer cold cathode electron source with a double ring gate structure and a manufacturing method thereof. Background technique [0002] Chinese patent ZL201610542509.8, titled nanowire cold cathode electron source array with self-aligned focusing structure and its manufacturing method, the top cathode electrode and top gate electrode film are prepared to form the electrode film during the deposition process, through etching through holes and The bottom cathode electrode strips are connected to the bottom cathode grid strips; Chinese patent ZL201711063201.6, titled column-addressable coplanar focusing nano-cold cathode electron source array and its manufacturing method, discloses that the bottom cathode is vertically arranged on the substrate The electrode strips and the bottom cathode grid strips make the focusing electrode and the control grid on the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J1/304H01J1/02H01J9/02
CPCH01J1/02H01J1/304H01J9/02H01J9/025H01J9/027
Inventor 陈军黄佳邓少芝许宁生佘峻聪
Owner SUN YAT SEN UNIV
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