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Cap-layer-free InP HEMT ohmic contact structure, terahertz detector and manufacturing method thereof

A technology of ohmic contact and fabrication method, applied in semiconductor devices, electric solid state devices, semiconductor/solid state device parts and other directions, can solve the problems of gate leakage, affecting the effective work function of the gate metal, reducing the sensitivity of the detector, etc., to achieve simplification The effect of preparation process, improved transport characteristics, and improved sensitivity

Pending Publication Date: 2022-07-29
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Figure 1a Shows a diagram of a conventional structure with an InGaAs cap layer, which is etched in two steps to achieve a gate recess process. The etching of the cap layer will introduce foreign atoms and corrosion debris on the semiconductor surface, resulting in a large number of surface states Can affect the effective work function of the gate metal and cause gate leakage, thereby reducing the sensitivity of the detector

Method used

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  • Cap-layer-free InP HEMT ohmic contact structure, terahertz detector and manufacturing method thereof
  • Cap-layer-free InP HEMT ohmic contact structure, terahertz detector and manufacturing method thereof
  • Cap-layer-free InP HEMT ohmic contact structure, terahertz detector and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] A fabrication method of a terahertz detector based on a capless InP HEMT, comprising:

[0058] On the InP substrate, the InGaAs / InAs / InGaAs=2nm / 5nm / 3nm composite channel layer and the 11nm InAlAs barrier layer, which are stacked in sequence, are fabricated. The composite channel layer and the InAlAs barrier layer form a heterojunction, so A two-dimensional electron gas is formed between the composite channel layer and the InAlAs barrier layer;

[0059] Mesa isolation is formed by dry etching the InAlAs barrier layer by ICP, and Ni / Ge / Au ohmic contact metal is fabricated by electron beam evaporation, etc. 2 Atmosphere, annealed at 200 °C for 20 seconds, and annealed at 340 °C for 80 seconds, the specific contact resistivity of the uncapped InP HEMT reached 1.80 × 10 -2 Ω·cm 2 ;

[0060] Pt(7nm) / Ti(30nm) / Pt(20nm) / Au(180nm) gate metal and antenna were fabricated by electron beam evaporation; Ni(30nm) / Au(300nm) thickened lead electrodes were fabricated by electron beam e...

Embodiment 2

[0062] A fabrication method of a terahertz detector based on a capless InP HEMT, comprising:

[0063] On the InP substrate, the InGaAs / InAs / InGaAs=2nm / 5nm / 3nm composite channel layer and the 11nm InAlAs barrier layer, which are stacked in sequence, are fabricated. The composite channel layer and the InAlAs barrier layer form a heterojunction, so A two-dimensional electron gas is formed between the composite channel layer and the InAlAs barrier layer;

[0064] Mesa isolation is formed by dry etching the InAlAs barrier layer by ICP, and Ni / Ge / Au ohmic contact metal is fabricated by electron beam evaporation, etc. 2 Atmosphere, annealed at 200 °C for 20 seconds, and annealed at 380 °C for 80 seconds, the specific contact resistivity of the uncapped InP HEMT reached 2.94 × 10 -3 Ω·cm 2 ;

[0065] Pt(7nm) / Ti(30nm) / Pt(20nm) / Au(180nm) gate metal and antenna were fabricated by electron beam evaporation; Ni(30nm) / Au(300nm) thickened lead electrodes were fabricated by electron beam e...

Embodiment 3

[0067] A fabrication method of a terahertz detector based on a capless InP HEMT, comprising:

[0068] On the InP substrate, the InGaAs / InAs / InGaAs=2nm / 5nm / 3nm composite channel layer and the 11nm InAlAs barrier layer, which are stacked in sequence, are fabricated. The composite channel layer and the InAlAs barrier layer form a heterojunction, so A two-dimensional electron gas is formed between the composite channel layer and the InAlAs barrier layer;

[0069] Mesa isolation is formed by dry etching the InAlAs barrier layer by ICP, and Ni / Ge / Au ohmic contact metal is fabricated by electron beam evaporation, etc. 2 Atmosphere, annealed at 200 °C for 20 seconds, and annealed at 370 °C for 50 seconds, the specific contact resistivity of the uncapped InP HEMT reached 6.22×10 -4 Ω·cm 2 ;

[0070] Pt(7nm) / Ti(30nm) / Pt(20nm) / Au(180nm) gate metal and antenna were fabricated by electron beam evaporation; Ni(30nm) / Au(300nm) thickened lead electrodes were fabricated by electron beam eva...

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Abstract

The invention discloses a cap-layer-free InP HEMT ohmic contact structure, a terahertz detector and a manufacturing method of the cap-layer-free InP HEMT ohmic contact structure. The method for forming the ohmic contact comprises the steps that a metal layer containing metal Ni, Ge and Au is manufactured and formed on a semiconductor epitaxial structure containing an InGaAs layer, first-stage annealing treatment and second-stage annealing treatment are sequentially carried out under the nitrogen atmosphere condition, the temperature of the first-stage annealing treatment is 200 DEG C, the time of the first-stage annealing treatment is 20 s, the temperature of the second-stage annealing treatment is 200 DEG C, and the time of the second-stage annealing treatment is 20 s. And the temperature of the second-stage annealing treatment is increased to 340-380 DEG C, and the time is 50-100 s. According to the manufacturing method of the terahertz detector based on the cap-layer-free InP HEMT provided by the embodiment of the invention, in the InP HEMT, the cap-layer-free structure reduces the material epitaxial growth cost and simplifies the preparation process; meanwhile, a large number of surface states are prevented from being introduced when the cap layer is etched, the grid control characteristic of the device is improved while the grid electric leakage is restrained, and then the sensitivity of the detector is guaranteed.

Description

technical field [0001] The invention relates to a terahertz detector, in particular to a capless InP HEMT ohmic contact structure, a terahertz detector and a manufacturing method thereof, belonging to the technical field of micro-nano manufacturing. Background technique [0002] Terahertz waves have attracted widespread attention because of their properties that other electromagnetic waves, such as microwaves, infrared and X-rays, have been widely used in. Due to the limitation of the technical level of solid-state terahertz light sources, the development of terahertz detectors has become the key to promoting the application of terahertz technology. However, the sensitivity of the current detectors is not high enough, and the requirements for the detection environment are also very strict, which greatly hinders the application of terahertz technology. [0003] In the epitaxial structure of conventional InP HEMTs, various degrees of doped In are usually grown on the surface ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224H01L23/66H01L31/0352H01L31/112H01Q1/22
CPCH01L31/1844H01L31/022408H01L31/112H01L31/035272H01L23/66H01Q1/2283Y02P70/50
Inventor 焦尚孙建东秦华
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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