39results about How to "Improve transport properties" patented technology

A tin sulfide thin film solar cell comprises a conductive glass / metal gate electrode and a metal back electrode and is characterized in that uni-junction or multi-junction n-SnS2 or the composite thin film thereof and p-SnS or the composite thin film thereof are formed between the conductive glass / metal gate electrode and the metal back contact. The composite means the tin sulfide obtained by doping tin bromide (n-SnS2) and stannous sulfide (p-SnS). The solar cell is rich in material sources, safe and environment-friendly, convenient in processing and effectively solves the collection problem of current carriers with the aid of such electrodes as metallic tin by using SnS2 and SnS, which have the same components and different conduction types and liable to realize energy gap match, heterojunction transition and good transport property of the current carriers.

Disclosed are certain oligomeric and polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and / or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide high power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on / off current ratios, and / or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

The invention discloses a two-dimensional lead-free perovskite material and a design method. The structural formula of the two-dimensional lead-free perovskite material is expressed as: AxByXz, wherein x = 1, 2, 3; y = 1, 2 ; Z = 4, 7, 8, 9; A is one element of Cs, Ba, Sr, and Ca; B is one element of Sb, Bi, Ga, In, Au, Sn, Hf, Zr, amd Ti; X is one element of F, Cl, Bre, I, S, Se, and Te. A firstprinciple method that is widely used, accurate in computation, and low in cost is used to systematically compute the excellent properties of such structure, and two types of perovskite materials, including transcending solar photovoltaic star material MAPbI3 and a graphene-like semiconductor with graphene linear electronic dispersion and an intrinsic quasi-particle bandgap of about 0.1 to 1 eV, are found out.

A preparation method of olivine type lithium manganese phosphate lithium ion battery anode material with high specific energy is disclosed.according to LiMn0. 85-XFe0.15Zrx(PO4)1-2x (SiO4) 2x stoichiometric ratio, wherein, x=0. 005-0.05, that lithium source, the manganese source, the phosphorus source, the iron source, the zirconium source and the silicon source are uniformly mixed, heat treated at 300-450 DEG C for 2-10 hour, then pulverized and ground, and sintered at 500-800 DEG C for 3-20 hours. The invention has the advantages of simple process route, easy operation, short production period, low production cost, and the like, and greatly improves the circulation performance and the rate performance, and is suitable for practical application and large-scale production. The material prepared by the invention is assembled into an experimental battery, and the performance of the battery is tested on a charging and discharging test platform, and the result shows that the cycling performance and the rate performance of the material are improved through a multi-doping modification method.

The invention relates to a preparation method of CdS / ZnO core-shell-structure nanowires. The preparation method comprises the following steps: 1. preparing a seed crystal layer on a clean substrate surface; 2. putting the substrate with the seed crystal layer obtained in the step 1 in a high-temperature tube furnace, and heating a reaction source (composed of thoroughly mixed high-purity ZnO and C powder) to 900-950 DEG C, thereby obtaining a ZnO nanowire array, wherein the substrate temperature is 600-650 DEG C; 3. carrying out surface vulcanization treatment on the ZnO nanowires; and 4. coating a CdS shell structure. The ZnO nanowire surface is subjected to vulcanization treatment, so the process is simple and is an improvement of the existing preparation technique. The ZnO surface is subjected to vulcanization treatment to form S dangling bonds, thereby receiving and depositing CdS molecules more effectively, implementing the smooth transition of the interface between the ZnO and CdS, and enhancing the electron transport property of the structure.

A tin sulfide thin film solar cell comprises a conductive glass / metal gate electrode and a metal back electrode and is characterized in that uni-junction or multi-junction n-SnS2 or the composite thinfilm thereof and p-SnS or the composite thin film thereof are formed between the conductive glass / metal gate electrode and the metal back contact. The composite means the tin sulfide obtained by doping tin bromide (n-SnS2) and stannous sulfide (p-SnS). The solar cell is rich in material sources, safe and environment-friendly, convenient in processing and effectively solves the collection problemof current carriers with the aid of such electrodes as metallic tin by using SnS2 and SnS, which have the same components and different conduction types and liable to realize energy gap match, heterojunction transition and good transport property of the current carriers.

The invention discloses a light or gas detector based on an inorganic semiconductor single crystal network structure. The detector comprises a sensitive element layer, a source electrode and a drainage electrode. The detector is characterized in that: the sensitive element layer is formed by the inorganic semiconductor single crystal network structure. Compared with the sensitive element adopting the film or polycrystal network structure in the traditional detector, the single crystal network structure can enable the semiconductor material as a detecting layer to have a large specific surface area, and the light or gas acting site is increased; and through the single crystal network structure, the number of faults can be obviously reduced, and the electronic transport property is improved. Thus, by the method, the sensitivity of the detector can be obviously improved, the response time is shortened, and the detection efficiency is improved.

The invention relates to a non-polar InAlN / GaN high electron mobility transistor and a preparation method thereof. The preparation method includes the following steps: S1. selecting a non-polar GaN material as a substrate; S2. growing GaN on the substrate to form a non-polar channel layer; S3. growing InAlN on the non-polar channel layer to form a non-polar barrier layer; and S4. making a source electrode and a drain electrode in the non-polar channel layer and the non-polar barrier layer, making a grid electrode on the non-polar barrier layer, and obtaining the non-polar InAlN / GaN high electron mobility transistor. According to the preparation method of the non-polar InAlN / GaN high electron mobility transistor of the embodiments of the invention, under certain process conditions, the non-polar channel layer and barrier layer are formed, the non-polar channel layer and the non-polar barrier layer form a non-polar heterostructure, the non-polar heterostructure can perform modulation onspontaneous polarization and piezoelectric polarization, thereby suppressing generation of high-density polarization charges in the channel, and an enhanced effect is achieved.

The invention relates to a preparation method of CdS / ZnO core-shell-structure nanowires. The preparation method comprises the following steps: 1. preparing a seed crystal layer on a clean substrate surface; 2. putting the substrate with the seed crystal layer obtained in the step 1 in a high-temperature tube furnace, and heating a reaction source (composed of thoroughly mixed high-purity ZnO and C powder) to 900-950 DEG C, thereby obtaining a ZnO nanowire array, wherein the substrate temperature is 600-650 DEG C; 3. carrying out surface vulcanization treatment on the ZnO nanowires; and 4. coating a CdS shell structure. The ZnO nanowire surface is subjected to vulcanization treatment, so the process is simple and is an improvement of the existing preparation technique. The ZnO surface is subjected to vulcanization treatment to form S dangling bonds, thereby receiving and depositing CdS molecules more effectively, implementing the smooth transition of the interface between the ZnO and CdS, and enhancing the electron transport property of the structure.

A combustion flame stabilizer assisted by discharging plasma comprises a high-voltage electrode, a mixing cavity is formed in the high-voltage electrode, and an air inlet is formed in the outer wall side of the high-voltage electrode. An opening formed in the upper side is an air outlet, a quartz tube is arranged on the lower side, a copper ring ground electrode is fixed into the cavity through aquartz tube, an annular hydrocyclone is mounted at the position, above the copper ring ground electrode, of the inner wall of the high-voltage electrode, and a plurality of center current guide columns are formed in the position, corresponding to the annular hydrocyclone, in the high-voltage electrode. According to the flame stabilizer, gas fuel canbbe subjected to motivation, dissociation, ionization and other actions to generate the plasma, a large number of chemical active particles are included, the flame stabilizer can work at low oxygen and low pressure, and the combustion efficiency ofa combustor is further improved; by means of the structure, the energy exchange rate of gas backflow can be increased, and therefore the stability of flames is improved.

The invention discloses a method for modulating Fermi level of an optical anode of a dye sensitized solar cell through trace N-type doping, which comprises the steps of: with a salt containing a +5 valence or +6 valence metal element is used as an N type doping source material, preparing trace N type doped titanium dioxide slurry by adopting a hydrothermal method and preparing a trace N type doped titanium dioxide nanocrystalline porous film electrode by adopting a coating method. The Fermi level of titanium dioxide nano particles is modulated through trace N type doping, which can remarkablyimprove the open-circuit voltage, the short-circuit current and the photoelectricity conversion efficiency of the dye sensitized solar cell. Meanwhile, the invention has the advantages of low cost, simple process and good repeatability, and is suitable for industrialized application.

The invention relates to a method for adjusting and controlling the heavy oil molecular structure. Supercritical benzene in a specific thermodynamics state and a mesoporous molecular sieve are introduced into the shallow catalytic cracking of heavy oil. By dissolving the heavy oil in the supercritical benzene in the specific thermodynamics state, the diffusion coefficient D of heavy oil moleculescan be easily improved; by means of the mesoporous molecular sieve, the adverse effects of diffusion blocking factors F(dr / d) on the diffusion of the heavy oil molecules in catalyst ducts are furtherrelieved. Thus, the diffusion cover of the carbon positive ion mechanism catalytic cracking of the heavy oil is converted into reaction kinetics control which can be smoothly conducted at a low temperature. Through the measures, the breakage of aromatic alkyl side chains or links of heavy oil molecular structure adjusting and controlling is more rapidly decided, cracking is controlled at a properdepth on the basis of the optimization of the technological conditions. Moreover, thick cyclization is restrained and no coke is generated. The processed product can be used for subsequent catalytic hydrogenation or transport property improvement.

A method of obtaining an excellent luminescence of an EL element having a luminous layer containing a dopant is provided, thereby providing a method of manufacturing a light emitting device containing the EL element with an excellent luminescence, in which a first luminous layer made of a luminous material and a dopant is formed by evaporation, and a second luminous layer made of the luminous material is formed by continuing the evaporation of the luminous material while stopping the evaporation of the dopant. As a result, continuity of the luminous layers is enhanced, whereby an excellent luminescence can be obtained.

The invention discloses a nitride high electron mobility transistor epitaxial structure and a preparation method thereof. The nitride high electron mobility transistor epitaxial structure includes a substrate layer on which a core layer, a buffer layer, a barrier layer and a channel layer are sequentially grown on the substrate layer from the bottom up, wherein the substrate layer is sapphire or SiC; the core layer is AlN, GaN or AlGaN; the buffer layer is GaN, and the channel layer is GaN; the barrier layer is a composite InAlN barrier including two layers of structures, the first layer is InAlN with constant common components (the In component is a value within 0.16-0.19, and lattice-matched with GaN), the second layer is InAlN with gradually changed components, and the In component is gradually changed from a value within 0.16-0.19 to zero from the bottom up. According to the nitride high electron mobility transistor epitaxial structure and the preparation method thereof, the damage to a heterojunction interface is avoided, and the transport characteristics of two-dimensional electron gas is improved; compared with the InAlN barrier layer with constant common components, the In component of the InAlN barrier layer is gradually changed to be zero from the bottom up, so that the InAlN alloy is gradually changed to be AlN with stronger polarization effect, and thereby the electron concentration of the channel can be further improved.

This invention relates to a method for modulating the transport property of nm level field effect transistors by dipole effect including: forming a dipole layer on the surface of the source and drain of the nm level field effect transistor to alter the electrostatic potential of the reality region B or A , selecting the strength of the dipole layer at the electrode surface to make the tunnel through probability of electrons or cavity in region B the largest or favorable for electrons or cavities to inject into the A region of the device from the electrode, adjusting the gate voltage to control the conduction and close of the field effect transistors.

A preparation method of olivine type lithium manganese phosphate lithium ion battery anode material with high specific energy is disclosed.according to LiMn0. 85-XFe0.15Zrx(PO4)1-2x (SiO4) 2x stoichiometric ratio, wherein, x=0. 005-0.05, that lithium source, the manganese source, the phosphorus source, the iron source, the zirconium source and the silicon source are uniformly mixed, heat treated at 300-450 DEG C for 2-10 hour, then pulverized and ground, and sintered at 500-800 DEG C for 3-20 hours. The invention has the advantages of simple process route, easy operation, short production period, low production cost, and the like, and greatly improves the circulation performance and the rate performance, and is suitable for practical application and large-scale production. The material prepared by the invention is assembled into an experimental battery, and the performance of the battery is tested on a charging and discharging test platform, and the result shows that the cycling performance and the rate performance of the material are improved through a multi-doping modification method.

The invention relates to a 2,7-alkyl substituted phenanthrene[9,10-b]pyrazine derivative monomer, a preparation method thereof and a polymer. The 2,7-alkyl-substituted phenanthrene[9,10-b]pyrazine derivative unit has a large π-conjugated rigid plane and strong electron affinity. The introduction of 2,7-alkyl plays a key role in improving the molecular weight, solubility, processability or self-assembly of such monomers or related polymers. Synthesis of 2,7-alkyl-substituted phenanthrene[9,10-b]pyrazine derivative monomers via bromination, reduction, hydroxyl protection, 2,7-alkylation, fuming nitric acid oxidative deprotection of phenanthrenequinone and ring-closing steps, the synthesis and purification are easy, and the raw material price is low, which is conducive to mass production. 2,7-Alkyl-substituted phenanthrene[9,10-b]pyrazine derivative monomers can be polymerized by Suzuki, Stille or Yamamoto to obtain homopolymers or copolymers. This series of polymers has good solubility in organic solvents, is suitable for solution processing, and has broad application prospects in the fields of organic flat panel displays, photovoltaic cells and organic field effect transistors.