39results about How to "Improve transport properties" patented technology

A tin sulfide thin film solar cell comprises a conductive glass / metal gate electrode and a metal back electrode and is characterized in that uni-junction or multi-junction n-SnS2 or the composite thin film thereof and p-SnS or the composite thin film thereof are formed between the conductive glass / metal gate electrode and the metal back contact. The composite means the tin sulfide obtained by doping tin bromide (n-SnS2) and stannous sulfide (p-SnS). The solar cell is rich in material sources, safe and environment-friendly, convenient in processing and effectively solves the collection problem of current carriers with the aid of such electrodes as metallic tin by using SnS2 and SnS, which have the same components and different conduction types and liable to realize energy gap match, heterojunction transition and good transport property of the current carriers.

The invention discloses a two-dimensional lead-free perovskite material and a design method. The structural formula of the two-dimensional lead-free perovskite material is expressed as: AxByXz, wherein x = 1, 2, 3; y = 1, 2 ; Z = 4, 7, 8, 9; A is one element of Cs, Ba, Sr, and Ca; B is one element of Sb, Bi, Ga, In, Au, Sn, Hf, Zr, amd Ti; X is one element of F, Cl, Bre, I, S, Se, and Te. A firstprinciple method that is widely used, accurate in computation, and low in cost is used to systematically compute the excellent properties of such structure, and two types of perovskite materials, including transcending solar photovoltaic star material MAPbI3 and a graphene-like semiconductor with graphene linear electronic dispersion and an intrinsic quasi-particle bandgap of about 0.1 to 1 eV, are found out.

A preparation method of olivine type lithium manganese phosphate lithium ion battery anode material with high specific energy is disclosed.according to LiMn0. 85-XFe0.15Zrx(PO4)1-2x (SiO4) 2x stoichiometric ratio, wherein, x=0. 005-0.05, that lithium source, the manganese source, the phosphorus source, the iron source, the zirconium source and the silicon source are uniformly mixed, heat treated at 300-450 DEG C for 2-10 hour, then pulverized and ground, and sintered at 500-800 DEG C for 3-20 hours. The invention has the advantages of simple process route, easy operation, short production period, low production cost, and the like, and greatly improves the circulation performance and the rate performance, and is suitable for practical application and large-scale production. The material prepared by the invention is assembled into an experimental battery, and the performance of the battery is tested on a charging and discharging test platform, and the result shows that the cycling performance and the rate performance of the material are improved through a multi-doping modification method.

The invention relates to a preparation method of CdS / ZnO core-shell-structure nanowires. The preparation method comprises the following steps: 1. preparing a seed crystal layer on a clean substrate surface; 2. putting the substrate with the seed crystal layer obtained in the step 1 in a high-temperature tube furnace, and heating a reaction source (composed of thoroughly mixed high-purity ZnO and C powder) to 900-950 DEG C, thereby obtaining a ZnO nanowire array, wherein the substrate temperature is 600-650 DEG C; 3. carrying out surface vulcanization treatment on the ZnO nanowires; and 4. coating a CdS shell structure. The ZnO nanowire surface is subjected to vulcanization treatment, so the process is simple and is an improvement of the existing preparation technique. The ZnO surface is subjected to vulcanization treatment to form S dangling bonds, thereby receiving and depositing CdS molecules more effectively, implementing the smooth transition of the interface between the ZnO and CdS, and enhancing the electron transport property of the structure.

The invention provides a preparation method of a GaN-based LED chip with a performance optimization effect. The preparation method comprises the following steps of manufacturing an epitaxial layer, manufacturing a transparent conductive layer, manufacturing an N electrode leading-out hole, removing photoresist, forming an isolation trench, removing the photoresist and an SiO<2> mask layer, manufacturing an insulating layer and manufacturing an electrode. By adoption of an SiO<2> mask layer over etching method and by combination of inductively coupled plasma (ICP) etching, the side wall of theLED chip isolation trench is of an inverted trapezoidal structure; for a flip-chip LED chip and a high-voltage LED chip, SiO<2> on the side wall of the isolation trench can be uniform in deposition, so that generation of an electric leakage condition can be prevented effectively, and production yield can be optimized; and for the high-voltage LED chip, when an electrode connecting bridge is paved,the electrode can reach the bottom of the isolation trench along the trapezoidal structure of the side wall, and then climbs to an electrode of another chip from the bottom of the isolation trench along the trapezoidal structure of the side wall, so that a fault phenomenon caused in side wall electrode bridging can be avoided, electrode stability is improved, LED damage probability is lowered andthe production yield is optimized.

The invention relates to a method for adjusting and controlling the heavy oil molecular structure. Supercritical benzene in a specific thermodynamics state and a mesoporous molecular sieve are introduced into the shallow catalytic cracking of heavy oil. By dissolving the heavy oil in the supercritical benzene in the specific thermodynamics state, the diffusion coefficient D of heavy oil moleculescan be easily improved; by means of the mesoporous molecular sieve, the adverse effects of diffusion blocking factors F(dr / d) on the diffusion of the heavy oil molecules in catalyst ducts are furtherrelieved. Thus, the diffusion cover of the carbon positive ion mechanism catalytic cracking of the heavy oil is converted into reaction kinetics control which can be smoothly conducted at a low temperature. Through the measures, the breakage of aromatic alkyl side chains or links of heavy oil molecular structure adjusting and controlling is more rapidly decided, cracking is controlled at a properdepth on the basis of the optimization of the technological conditions. Moreover, thick cyclization is restrained and no coke is generated. The processed product can be used for subsequent catalytic hydrogenation or transport property improvement.

The invention relates to a manufacturing method of a transistor and especially relates to a manufacturing method of a ring-fence non-junction nanowire transistor. MOCVD is used to epitaxially grow a doped nanowire array on an III-V family material. Through a thermal peeling adhesive tape and a fixing panel, the nanowire is transferred. A non-junction nanowire transistor with a ring-fence structure is manufactured on a silicon-based substrate. By using the manufacturing method of the ring-fence non-junction nanowire transistor provided in the invention, compatibility of an III-V family material nanowire and a plane silicon technology can be realized; simultaneously, mobility degeneration is effectively restrained and a current driving capability of the transistor is increased.

This invention relates to a method for modulating the transport property of nm level field effect transistors by dipole effect including: forming a dipole layer on the surface of the source and drain of the nm level field effect transistor to alter the electrostatic potential of the reality region B or A , selecting the strength of the dipole layer at the electrode surface to make the tunnel through probability of electrons or cavity in region B the largest or favorable for electrons or cavities to inject into the A region of the device from the electrode, adjusting the gate voltage to control the conduction and close of the field effect transistors.

The invention relates to a 2,7-alkyl substituted phenanthro [9,10-b] pyrazine derivative monomer, a preparation method of the 2,7-alkyl substituted phenanthro [9,10-b] pyrazine derivative monomer, and a polymer. The 2,7-alkyl substituted phenanthro [9,10-b] pyrazine derivative monomer has a large pi conjugation rigid plane and stronger electron affinity. The introduction of 2,7-alkyl has a critical effect in improving performances, such as molecular weight, solubility, processibility or self-assembly, of the monomer or the relevant polymer. The 2,7-alkyl substituted phenanthro [9,10-b] pyrazine derivative monomer is synthesized by phenanthraquinone bromination, reduction, hydroxyl protection, 2,7-alkylation, fuming nitric acid oxidation deprotection, ring closing and the like, and is easy to synthesize and purify, raw materials are low in price, and the mass production is facilitated. A homopolymer or a copolymer can be obtained by Suzuki, Stille or Yamamoto polymerization reaction of the 2,7-alkyl substituted phenanthro [9,10-b] pyrazine derivative monomer. The series of polymers have good solubility in an organic solvent, are suitable for solution processing, and have wide application prospects in the fields of organic panel display, photovoltaic batteries, and organic field effect transistors.

The invention discloses a method for modulating Fermi level of an optical anode of a dye sensitized solar cell through trace N-type doping, which comprises the steps of: with a salt containing a +5 valence or +6 valence metal element is used as an N type doping source material, preparing trace N type doped titanium dioxide slurry by adopting a hydrothermal method and preparing a trace N type doped titanium dioxide nanocrystalline porous film electrode by adopting a coating method. The Fermi level of titanium dioxide nano particles is modulated through trace N type doping, which can remarkably improve the open-circuit voltage, the short-circuit current and the photoelectricity conversion efficiency of the dye sensitized solar cell. Meanwhile, the invention has the advantages of low cost, simple process and good repeatability, and is suitable for industrialized application.

The invention discloses a light or gas detector based on an inorganic semiconductor single crystal network structure. The detector comprises a sensitive element layer, a source electrode and a drainage electrode. The detector is characterized in that: the sensitive element layer is formed by the inorganic semiconductor single crystal network structure. Compared with the sensitive element adopting the film or polycrystal network structure in the traditional detector, the single crystal network structure can enable the semiconductor material as a detecting layer to have a large specific surface area, and the light or gas acting site is increased; and through the single crystal network structure, the number of faults can be obviously reduced, and the electronic transport property is improved. Thus, by the method, the sensitivity of the detector can be obviously improved, the response time is shortened, and the detection efficiency is improved.

The invention discloses a compact atomization-assisted CVD (chemical vapor deposition) film preparation device which comprises a case, an atomization unit, a buffer cavity, a heating unit and a tail gas collecting unit are slidably arranged on the case, the atomization unit is communicated with the buffer cavity, one end of a quartz cavity is communicated with the buffer cavity, the other end of the quartz cavity is communicated with the tail gas collecting unit, and the heating unit is communicated with the tail gas collecting unit. A substrate sample is arranged in the quartz cavity, the quartz cavity penetrates through the heating unit and is heated by the heating unit, and a precursor solution enters the buffer cavity after being atomized by the atomization unit and enters the quartz cavity from the buffer cavity for film preparation. According to the scheme, the whole heating unit can move, the temperature gradient of the thin film deposition area in the quartz cavity in the vertical direction can be effectively changed, temperature field adjustability is achieved in the horizontal direction, and conditions are provided for exploring a thin film growth mechanism.

The invention discloses a liquid sulfur positive electrode and a semi-liquid lithium-sulfur battery, the liquid sulfur positive electrode comprises a current collector and a sulfur-containing solution, and the sulfur-containing solution at least comprises polysulfide, a high donor number solvent, organic fluoroether and a catalyst. The liquid sulfur positive electrode is high in sulfur loading capacity, low in electrolyte consumption, moderate in viscosity and good in ionic conductivity, the problems of insulation and volume expansion of the sulfur positive electrode can be solved, meanwhile, sulfur conversion reaction kinetics is promoted, and shuttling of polysulfide can be inhibited. The semi-liquid lithium-sulfur battery manufactured by utilizing the liquid positive electrode has high reversible capacity, good cycling stability and rate capability, and the actual energy density has more advantages than that of the traditional solid lithium-sulfur battery.

The invention discloses a D-A-pi-A-D type fluorescent compound and a preparation method thereof, wherein the structural formula of the D-A-pi-A-D type fluorescent compound is shown in the specification, wherein methoxytriphenylamine is used as an electron donor D, benzothiadiazole is used as an electron acceptor A, and carbazole is a pi bridge. The D-A-pi-A-D type fluorescent compound disclosed by the invention has the advantages that the energy level is easy to adjust and the pi conjugate length is easy to prolong so as to improve the charge transport property, has good symmetry and higher thermal stability and morphological stability, is an excellent fluorescent compound, and can be applied to perovskite solar cells (PSCs) as a hole transport material.

The invention discloses a method for modulating Fermi level of an optical anode of a dye sensitized solar cell through trace N-type doping, which comprises the steps of: with a salt containing a +5 valence or +6 valence metal element is used as an N type doping source material, preparing trace N type doped titanium dioxide slurry by adopting a hydrothermal method and preparing a trace N type doped titanium dioxide nanocrystalline porous film electrode by adopting a coating method. The Fermi level of titanium dioxide nano particles is modulated through trace N type doping, which can remarkablyimprove the open-circuit voltage, the short-circuit current and the photoelectricity conversion efficiency of the dye sensitized solar cell. Meanwhile, the invention has the advantages of low cost, simple process and good repeatability, and is suitable for industrialized application.

The invention provides a P-type GaN quantum well device transport characteristic EDA algorithm, an application and a simulation method, the EDA algorithm is established based on a k * p perturbation algorithm, simulates a valence band sub-band structure of a GaN / AlN heterojunction quantum well, can be effectively used for simulating the two-dimensional hole gas transport characteristic of the GaN / AlN heterojunction quantum well, can set a plurality of physical effects under the same frame, and can be used for simulating the transport characteristic of the GaN / AlN heterojunction quantum well. Through a quantum mechanics level, a microscopic coupling relationship between parameters such as a plurality of properties and the like and hole mobility is independently analyzed, and an important technical basis is provided for improving transport characteristics of a P-type GaN device.

The invention discloses a preparation method of an epitaxial high-conductivity BFCO photoelectric solid solution film and the epitaxial high-conductivity BFCO photoelectric solid solution film prepared by using the same. The method comprises the following steps that a precursor solution is prepared, and a film is prepared on a substrate by adopting a layer-by-layer annealing process, wherein the temperature during preparation of each film is 70-90 DEG C, the humidity during film throwing is 11-15%, and the annealing atmosphere is nitrogen. According to the preparation method of the epitaxial high-conductivity BFCO photoelectric solid solution film and the epitaxial high-conductivity BFCO photoelectric solid solution film prepared by using the same, the requirement on experimental equipmentis not too high, the raw material stoichiometric ratio is accurately controlled, the process is simple and convenient to operate, and the obtained film has high conductivity and good ferroelectric property, thereby having good application prospects in the fields of ferroelectric regulation and control logic devices and resistive memories.

A method of obtaining an excellent luminescence of an EL element having a luminous layer containing a dopant is provided, thereby providing a method of manufacturing a light emitting device containing the EL element with an excellent luminescence, in which a first luminous layer made of a luminous material and a dopant is formed by evaporation, and a second luminous layer made of the luminous material is formed by continuing the evaporation of the luminous material while stopping the evaporation of the dopant. As a result, continuity of the luminous layers is enhanced, whereby an excellent luminescence can be obtained.

The invention discloses a nitride high electron mobility transistor epitaxial structure and a preparation method thereof. The nitride high electron mobility transistor epitaxial structure includes a substrate layer on which a core layer, a buffer layer, a barrier layer and a channel layer are sequentially grown on the substrate layer from the bottom up, wherein the substrate layer is sapphire or SiC; the core layer is AlN, GaN or AlGaN; the buffer layer is GaN, and the channel layer is GaN; the barrier layer is a composite InAlN barrier including two layers of structures, the first layer is InAlN with constant common components (the In component is a value within 0.16-0.19, and lattice-matched with GaN), the second layer is InAlN with gradually changed components, and the In component is gradually changed from a value within 0.16-0.19 to zero from the bottom up. According to the nitride high electron mobility transistor epitaxial structure and the preparation method thereof, the damage to a heterojunction interface is avoided, and the transport characteristics of two-dimensional electron gas is improved; compared with the InAlN barrier layer with constant common components, the In component of the InAlN barrier layer is gradually changed to be zero from the bottom up, so that the InAlN alloy is gradually changed to be AlN with stronger polarization effect, and thereby the electron concentration of the channel can be further improved.

This invention relates to a method for modulating the transport property of nm level field effect transistors by dipole effect including: forming a dipole layer on the surface of the source and drain of the nm level field effect transistor to alter the electrostatic potential of the reality region B or A , selecting the strength of the dipole layer at the electrode surface to make the tunnel through probability of electrons or cavity in region B the largest or favorable for electrons or cavities to inject into the A region of the device from the electrode, adjusting the gate voltage to control the conduction and close of the field effect transistors.

The invention relates to a 2,7-alkyl substituted phenanthrene[9,10-b]pyrazine derivative monomer, a preparation method thereof and a polymer. The 2,7-alkyl-substituted phenanthrene[9,10-b]pyrazine derivative unit has a large π-conjugated rigid plane and strong electron affinity. The introduction of 2,7-alkyl plays a key role in improving the molecular weight, solubility, processability or self-assembly of such monomers or related polymers. Synthesis of 2,7-alkyl-substituted phenanthrene[9,10-b]pyrazine derivative monomers via bromination, reduction, hydroxyl protection, 2,7-alkylation, fuming nitric acid oxidative deprotection of phenanthrenequinone and ring-closing steps, the synthesis and purification are easy, and the raw material price is low, which is conducive to mass production. 2,7-Alkyl-substituted phenanthrene[9,10-b]pyrazine derivative monomers can be polymerized by Suzuki, Stille or Yamamoto to obtain homopolymers or copolymers. This series of polymers has good solubility in organic solvents, is suitable for solution processing, and has broad application prospects in the fields of organic flat panel displays, photovoltaic cells and organic field effect transistors.

The invention provides a preparation method for a graphene / copper composite nanosheet. The preparation method comprises the steps that step1, a copper-containing organic salt is dissolved in an organic solvent with the boiling point being higher than the decomposition temperature of the organic salt, and a decomposition solution is prepared; and step2, the decomposition solution obtained in the step1 is placed in a protective atmosphere to be heated and performs heat decomposition to generate copper and carbon, the generated carbon is adsorbed on the surface of the generated copper to form a graphene layer, the graphene layer makes copper growth be anisotropic, the growth direction of the copper is perpendicular to the crystal surface of the copper (111), the graphene / copper composite nanosheet is formed, and the side length size of the graphene / copper composite nanosheet can be controlled by changing the heat decomposition conditions. The preparation method for the graphene / copper composite nanosheet related by the invention has the advantages of being low in preparation temperature, easy to control, low in cost, easy to disperse, short in preparation period, environmentally friendly and non-toxic, low in energy consumption and simple in equipment.

The invention relates to non-polar InAlN / GaN high electron mobility transistor and a preparation method thereof. The preparation method comprises the following steps of S1, selecting a non-polar GaN material as a substrate; S2, growing GaN on the substrate to form a non-polar channel layer; S3, growing InAlN on the non-polar channel layer to form a non-polar barrier layer; and S4, manufacturing asource electrode and a drain electrode in the non-polar channel layer and the non-polar barrier layer, and manufacturing a grid electrode on the non-polar barrier layer to obtain the non-polar InAlN / GaN high electron mobility transistor. According to the preparation method of the non-polar InAlN / GaN high electron mobility transistor provided in the embodiment of the invention, the non-polar channel layer and barrier layer are formed under a certain process condition; and the non-polar channel layer and the non-polar barrier layer form a non-polar heterostructure, and the non-polar heterostructure can be used for modulating spontaneous polarization and piezoelectric polarization, so that the generation of high-density polarized charges in the channel is inhibited, and an enhanced effect isachieved.