Method for modulating carrying-performance nano-grade field effect transistor using dipale effect

Abstract

This invention relates to a method for modulating the transport property of nm level field effect transistors by dipole effect including: forming a dipole layer on the surface of the source and drain of the nm level field effect transistor to alter the electrostatic potential of the reality region B or A , selecting the strength of the dipole layer at the electrode surface to make the tunnel through probability of electrons or cavity in region B the largest or favorable for electrons or cavities to inject into the A region of the device from the electrode, adjusting the gate voltage to control the conduction and close of the field effect transistors.

Description

technical field [0001] The invention belongs to the technical field of nanoscale field effect transistors, in particular to a method for modulating the transport characteristics of nanoscale field effect transistors. Background technique [0002] At present, the miniaturization of devices has become a trend in the industrial field, and it is also a hot topic that has attracted much attention. In particular, nanodevices, such as field-effect transistors based on nanotubes or nanowires, have attracted increasing attention. In general, the gate voltage can modulate the transport characteristics of field effect transistors. However, as the size of devices decreases to the nanoscale, especially in systems containing metal electrodes and semiconductor contacts, the potential distribution near the electrodes becomes very important in the transport process. figure 1 (a) is a schematic diagram of such a nanoscale field-effect transistor. Wherein the source and the drain are metall...

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Problems solved by technology

In previous work, some people have used needle-like source and drain to increase the electric field strength in the contact area, making it conducive to electron tunneling and improving the transport characteristics of the system, but the source and drain are generally It is difficult to make it very small, so the shielding effect of the electrode still exists; some people divide the gate into several sections and apply a stronger gate voltage on the gate closest to the electrode, so that the shielding effect of the metal electrode cannot be completely overcome on the one hand. , but it is limited to a slightly smaller area, because no matter how large the gate voltage is, the shielding effect of the electrode still exists. Gates must be spaced very small and must be non-conductive, making them difficult to apply

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