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Method for manufacturing light emitting device

A technology for light-emitting devices and light-emitting layers, which is applied in the manufacture of semiconductor/solid-state devices, chemical instruments and methods, light-emitting materials, etc., and can solve problems such as the inability to obtain pure white light-emitting

Inactive Publication Date: 2009-01-14
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as shown in FIG. 8, in the above-mentioned method carried out by the present inventors, the EL element emits a color with a peak around 600 nm, so that pure white light emission cannot be obtained.

Method used

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  • Method for manufacturing light emitting device
  • Method for manufacturing light emitting device
  • Method for manufacturing light emitting device

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Experimental program
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Effect test

Embodiment approach 1

[0039] Embodiment 1 of the present invention is explained below with reference to Figs. 4A-6C. In Embodiment 1, a method of simultaneously manufacturing a pixel portion and TFTs of a driver circuit portion provided in its periphery will be described. But to simplify the description thereof, for the drive circuit, a CMOS circuit as a basic unit will be shown in each figure.

[0040] First, as shown in FIG. 4A , a base film 501 made of a silicon oxynitride thin film is formed on a glass substrate 500 to a thickness of 300 nm. Here, the silicon oxynitride thin film is formed in two layers, and the nitrogen concentration of the layer in contact with the glass substrate 500 is set to be relatively high at 10-25% by weight.

[0041] Next, a 50 nm-thick amorphous silicon thin film (not shown) was formed on the base film 501 by plasma CVD. Then, according to the crystallization technique disclosed in Japanese Patent Laid-Open No. Hei 7-130652, the amorphous silicon film is crystalli...

Embodiment approach 2

[0062] The method of manufacturing the EL element of the present invention can also be used in the method of manufacturing a passive matrix light emitting device. The present invention differs from the known method of manufacturing a passive type light emitting device only in making the EL element portion. When producing a light-emitting layer, if the light-emitting layer is produced according to the present invention, the effects of the present invention can be obtained.

Embodiment approach 3

[0064] In the active matrix type light emitting device described in Embodiment 1, each element is constituted by planar TFTs. However, each element may be constituted by a bottom gate TFT (typically, an inversion TFT). At this time, a crystalline silicon film or an amorphous silicon film may be used as the active layer. Thus, the present invention is characterized by the manufacturing process of the EL element, so there is no limitation on the structure of the TFT.

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Abstract

A method of obtaining an excellent luminescence of an EL element having a luminous layer containing a dopant is provided, thereby providing a method of manufacturing a light emitting device containing the EL element with an excellent luminescence, in which a first luminous layer made of a luminous material and a dopant is formed by evaporation, and a second luminous layer made of the luminous material is formed by continuing the evaporation of the luminous material while stopping the evaporation of the dopant. As a result, continuity of the luminous layers is enhanced, whereby an excellent luminescence can be obtained.

Description

technical field [0001] The present invention relates to a light-emitting device having an element (hereinafter referred to as EL element) composed of a thin film (hereinafter referred to as light-emitting layer) of a light-emitting material exhibiting EL (electroluminescence) sandwiched between an anode and a cathode. Note that organic EL displays and organic light emitting diodes (OLEDs) are included in the light emitting device of the present invention. [0002] Furthermore, the light-emitting materials that can be used in the present invention include all light-emitting materials that emit light (phosphorescence and / or fluorescence) through singlet excitation or triplet excitation or both. [0003] Furthermore, the dopant in the present invention refers to an organic material (organic compound) that is doped as a guest into a thin film composed of an organic material as a host. Typically, dopants are organic materials incorporated into the light-emitting layer to control t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/54H05B33/10H05B33/14H05B33/20C09K11/06H10K99/00
CPCH01L51/56H01L51/005H01L51/0084H01L51/002H01L51/0078H01L51/5036H01L51/001H10K71/164H10K71/30H10K85/60H10K85/311H10K85/341H10K50/125H10K71/40H10K71/50H10K71/00
Inventor 山形裕和高桥正弘
Owner SEMICON ENERGY LAB CO LTD
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