A kind of preparation method of cds/zno core-shell structure nanowire

Abstract

The invention relates to a preparation method of CdS / ZnO core-shell-structure nanowires. The preparation method comprises the following steps: 1. preparing a seed crystal layer on a clean substrate surface; 2. putting the substrate with the seed crystal layer obtained in the step 1 in a high-temperature tube furnace, and heating a reaction source (composed of thoroughly mixed high-purity ZnO and C powder) to 900-950 DEG C, thereby obtaining a ZnO nanowire array, wherein the substrate temperature is 600-650 DEG C; 3. carrying out surface vulcanization treatment on the ZnO nanowires; and 4. coating a CdS shell structure. The ZnO nanowire surface is subjected to vulcanization treatment, so the process is simple and is an improvement of the existing preparation technique. The ZnO surface is subjected to vulcanization treatment to form S dangling bonds, thereby receiving and depositing CdS molecules more effectively, implementing the smooth transition of the interface between the ZnO and CdS, and enhancing the electron transport property of the structure.

Description

technical field [0001] The patent of the present invention relates to a preparation method of nanowires, in particular to a preparation method of CdS / ZnO core-shell structure nanowires. Background technique [0002] The core-shell structure of CdS / ZnO nanowires is the key structure of quantum dot-sensitized solar cells (QDSSCs), and it is the current research hotspot and focus in the field of nanomaterials. In the existing reports, the structure is mainly prepared in an aqueous solution environment (ZnO nanowire preparation method: hydrothermal method, electrochemical deposition, etc., CdS coating layer preparation method: continuous ionic layer adsorption and reaction technology (SILAR), low temperature hydrothermal method (CBD Act), etc.). This preparation method limits the further improvement of the conversion efficiency of QDSSCs and the promotion and transformation of research results: 1. There are a large number of defects on the surface of ZnO nanowires grown at low ...

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Problems solved by technology

This preparation method limits the further improvement of the conversion efficiency of QDSSCs and the promotion and transformation of research results: 1. There are a large number of defects on the surface of ZnO nanowires grown at low temperature, which will trap transported carriers, thereby reducing device performance

2. The CBD method or SILAR method to wrap CdS quantum dots needs to soak the ZnO substrate in aqueous solution for many times or for a long time. This process will introduce more ZnO surface defects.

3. The solution preparation environment is complicated, the process stability is poor, and it is difficult to carry out large-scale growth and industrial promotion and application

The CdS cladding layer prepared by physical deposition methods such as PLD, magnetron sputtering, and thermal evaporation has poor crystal quality, resulting in poor light absorption and electrical properties of the sensitized material.

At the same time, due to the staggered growth of nanowires and mutual coverage, the physical deposition method cannot ensure that the surface of the nanowires is completely covered with CdS.

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