Non-polar InAlN/GaN high electron mobility transistor and preparation method thereof

A high electron mobility, non-polar technology, applied in the field of microelectronics, can solve problems affecting device stability, reliability hazards, material and device damage, etc., to suppress the generation of high-density polarized charges and improve process repetition Performance and stability, guaranteed performance and reliability

Inactive Publication Date: 2019-02-15
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because the fluorine ion implantation process will cause the increase of trap states and defect damage in the barrier layer, which will affect the performance of the device, especially the stability of the device under high temperature conditions; The purpose of the carrier, but the polarization charge at the interface of the heterostructure still exists; the prior art shows that during the device process such as gate dielectric deposition, the polarization char

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  • Non-polar InAlN/GaN high electron mobility transistor and preparation method thereof
  • Non-polar InAlN/GaN high electron mobility transistor and preparation method thereof
  • Non-polar InAlN/GaN high electron mobility transistor and preparation method thereof

Examples

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Example Embodiment

[0047] Example one

[0048] See figure 1 , figure 1 It is a flow chart of a manufacturing method of a non-polar InAlN / GaN high electron mobility transistor provided by an embodiment of the present invention, including the following steps:

[0049] S1. Select a non-polar GaN material as the substrate 101;

[0050] S2. Growing GaN on the substrate to form a non-polar channel layer;

[0051] S3. Growing InAlN on the non-polar channel layer to form a non-polar barrier layer;

[0052] S4. Fabricating source and drain electrodes in the non-polar channel layer and the non-polar barrier layer, fabricating a gate on the non-polar barrier layer, to obtain the non-polar InAlN / GaN high electron mobility transistor.

[0053] Specifically, after step S1, it further includes:

[0054] S11, performing nitriding treatment on the substrate under the condition of a temperature range of 828 to 1012°C; preferably, the treatment temperature is 920°C;

[0055] S12. The substrate is processed, and the processin...

Example Embodiment

[0075] Example two

[0076] See figure 2 , figure 2 This is a schematic structural diagram of a non-polar InAlN / GaN high electron mobility transistor provided by an embodiment of the present invention. On the basis of the above-mentioned embodiment 1, the purchased semi-insulating non-polar a-plane homogenous GaN material is used as the substrate 101. Perform the preparation of a non-polar InAlN / GaN high electron mobility transistor, where the semi-insulating non-polar a-plane homogenous GaN material is grown by the hydride vapor phase epitaxy (HVPE) method .

[0077] The embodiment of the present invention selects the non-polar GaN homogenous material based on the new hydride vapor phase epitaxy as the substrate, which not only can effectively alleviate the difficulty of epitaxially growing non-polar materials on heterogeneous materials, but also improves the crystal quality of epitaxial materials. The transport characteristics of heterostructures and the working performance of...

Example Embodiment

[0119] Example three

[0120] On the basis of the first and second embodiments, the angle between the gate direction of the non-polar InAlN / GaN high electron mobility transistor in this embodiment and the c-axis direction is 45°, please refer to Figure 4 with Figure 5 , Figure 4 It is a schematic structural diagram of another non-polar InAlN / GaN high electron mobility transistor provided by an embodiment of the present invention, Figure 5 It is a schematic diagram of the c-axis direction and the gate direction of another non-polar InAlN / GaN high electron mobility transistor provided by an embodiment of the present invention.

[0121] Specific steps are as follows:

[0122] Please refer to the second embodiment for steps S1 to S3;

[0123] S41, depositing a metal material on the non-polar barrier layer 203 by a metal evaporation method to form a source electrode 204 and a drain electrode 205;

[0124] First, lithography the source electrode region and the drain electrode region on th...

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Abstract

The invention relates to non-polar InAlN/GaN high electron mobility transistor and a preparation method thereof. The preparation method comprises the following steps of S1, selecting a non-polar GaN material as a substrate; S2, growing GaN on the substrate to form a non-polar channel layer; S3, growing InAlN on the non-polar channel layer to form a non-polar barrier layer; and S4, manufacturing asource electrode and a drain electrode in the non-polar channel layer and the non-polar barrier layer, and manufacturing a grid electrode on the non-polar barrier layer to obtain the non-polar InAlN/GaN high electron mobility transistor. According to the preparation method of the non-polar InAlN/GaN high electron mobility transistor provided in the embodiment of the invention, the non-polar channel layer and barrier layer are formed under a certain process condition; and the non-polar channel layer and the non-polar barrier layer form a non-polar heterostructure, and the non-polar heterostructure can be used for modulating spontaneous polarization and piezoelectric polarization, so that the generation of high-density polarized charges in the channel is inhibited, and an enhanced effect isachieved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a nonpolar InAlN / GaN high electron mobility transistor and a preparation method thereof. Background technique [0002] Due to the existence of high-mobility two-dimensional electron gas in the channel of GaN-based heterostructures, GaN has become the most ideal material for the preparation of high-performance electronic devices. Since K.Han et al. first proposed the concept of GaN-based heterostructures, heterostructures represented by AlGaN / GaN, InAlN / GaN, AlN / GaN, etc. have achieved fruitful results in the preparation of high electron mobility transistors. Research results. Up to now, the cut-off frequency of High Electron Mobility Transistor (HEMT) based on the conventional AlGaN / GaN heterostructure has exceeded 200GHz, and the maximum oscillation frequency has also exceeded 300GHz. [0003] Transistor devices based on conventional polar c-plane III-nitr...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/10H01L21/335
CPCH01L29/1029H01L29/66462H01L29/778
Inventor 张雅超任泽阳张进成郝跃
Owner XIDIAN UNIV
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