Non-polar InAlN/GaN high electron mobility transistor and preparation method thereof

Abstract

The invention relates to non-polar InAlN / GaN high electron mobility transistor and a preparation method thereof. The preparation method comprises the following steps of S1, selecting a non-polar GaN material as a substrate; S2, growing GaN on the substrate to form a non-polar channel layer; S3, growing InAlN on the non-polar channel layer to form a non-polar barrier layer; and S4, manufacturing asource electrode and a drain electrode in the non-polar channel layer and the non-polar barrier layer, and manufacturing a grid electrode on the non-polar barrier layer to obtain the non-polar InAlN / GaN high electron mobility transistor. According to the preparation method of the non-polar InAlN / GaN high electron mobility transistor provided in the embodiment of the invention, the non-polar channel layer and barrier layer are formed under a certain process condition; and the non-polar channel layer and the non-polar barrier layer form a non-polar heterostructure, and the non-polar heterostructure can be used for modulating spontaneous polarization and piezoelectric polarization, so that the generation of high-density polarized charges in the channel is inhibited, and an enhanced effect isachieved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a nonpolar InAlN / GaN high electron mobility transistor and a preparation method thereof. Background technique [0002] Due to the existence of high-mobility two-dimensional electron gas in the channel of GaN-based heterostructures, GaN has become the most ideal material for the preparation of high-performance electronic devices. Since K.Han et al. first proposed the concept of GaN-based heterostructures, heterostructures represented by AlGaN / GaN, InAlN / GaN, AlN / GaN, etc. have achieved fruitful results in the preparation of high electron mobility transistors. Research results. Up to now, the cut-off frequency of High Electron Mobility Transistor (HEMT) based on the conventional AlGaN / GaN heterostructure has exceeded 200GHz, and the maximum oscillation frequency has also exceeded 300GHz. [0003] Transistor devices based on conventional polar c-plane III-nitr...

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Problems solved by technology

However, because the fluorine ion implantation process will cause the increase of trap states and defect damage in the barrier layer, which will affect the performance of the device, especially the stability of the device under high temperature conditions; The purpose of the carrier, but the polarization charge at the interface of the heterostructure still exists; the prior art shows that during the device process such as gate dielectric deposition, the polarization charge will cause the negative drift of the device threshold voltage, and the reliability There are hidden dangers

[0008] To sum up, at present, there are many problems in the technology of realizing enhanced devices at home and abroad, mainly reflected in the poor process repeatability, damage to materials and devices caused by the process, and the influence of the process on the stability of devices, etc., thus affecting the performance of enhanced devices. and reliability

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