The invention relates to a preparation technology for
graphene transparent conductive films, in particular to a large-scale preparation method for stably-doped large-area
graphene transparent conductive films. According to the method, the
doping effect and stability of the
graphene transparent conductive films are improved through a sandwich structure, and a
doping agent is in direct contact with the intrinsic surface of graphene and positioned between the graphene and a transparent substrate. The method comprises the following steps: firstly, forming the
doping agent on the surface of the graphene or the transparent substrate on an initial substrate; secondly, combining the graphene, the doping agent and the transparent substrate; finally, separating the graphene from the initial substrate so as to prepare the stably-doped large-area graphene transparent conductive films. The graphene serves as an outer-layer protection film of the doping agent, so that the doping stability can be improved; the intrinsic surface of the graphene is in direct contact with the doping agent, so that the
pollution of an interface between the graphene and the doping agent by impurities can be avoided, the doping effect of the doping agent can be improved, and the
conductivity of the film can be enhanced; the transferring and doping processes of the graphene are combined, so that the large-scale preparation can be easily realized.