Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation for p-n junction hollow sphere and application in photocatalytic hydrogen production by water decomposition

A hollow sphere, p-n technology, applied in catalyst activation/preparation, physical/chemical process catalyst, metal/metal oxide/metal hydroxide catalyst, etc., to achieve simple and feasible process, increase hydrogen production yield, improve The effect of transmission efficiency

Inactive Publication Date: 2010-01-13
XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY
View PDF46 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Through the systematic novelty search of domestic and foreign patents, many patent reports on the preparation of nano-hollow spheres have been retrieved [9-55], and the direct preparation of p-n junction hollow sphere NiO-CdS nanocomposites and the composite hollow sphere There are no literature and patent reports for solar photocatalytic water splitting to produce hydrogen

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation for p-n junction hollow sphere and application in photocatalytic hydrogen production by water decomposition
  • Preparation for p-n junction hollow sphere and application in photocatalytic hydrogen production by water decomposition
  • Preparation for p-n junction hollow sphere and application in photocatalytic hydrogen production by water decomposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0089] Weigh 15g of glucose solid powder, measure 150mL of deionized water, dissolve glucose in deionized water, and stir evenly for 10min. The formed homogeneous solution was poured into a polytetrafluoroethylene-lined autoclave (volume 200 mL), heated in an oven to 165 °C, and kept at 165 °C for 5 h, then taken out and naturally cooled to room temperature. Filter, wash with deionized water and absolute ethanol three times respectively, and put the solid into a drying oven at 60° C. for 5 hours to obtain brown carbon nanospheres.

[0090] Weigh 10 g (0.83 mol) of the prepared carbon nanospheres, put them into a beaker, ultrasonicate for 30 min at a frequency of 31 Hz, and dry at 50 ° C; weigh 7 g (0.023 mol) of Cd(NO 3 ) 2 4H 2 O solid was added to 20 mL of deionized water to prepare an aqueous solution. This solution is impregnated in the carbon nanosphere of 10g, impregnates 2h, room temperature dries, makes the composite (C-Cd 2+ ).

[0091] Weigh 6.72g (0.028mol) Na ...

Embodiment 2

[0096] Weigh 1.25g of the hole sacrificial agent Na 2 S and 0.25g Na 2 SO 3 Dissolve in a 100mL Prex glass flat-bottomed reaction bottle with a flat lighted side containing 50mL of distilled water. Weigh 0.10 g of the p-n junction hollow sphere NiO-CdS nanocomposite material prepared in Example 1 and add it into the reaction flask.

[0097] Put the reaction bottle on the magnetic stirrer to stir, insert the three-way sampling glass bottle stopper into the reaction bottle, use the xenon lamp as the simulated sun light source, turn on the xenon lamp constant current power supply, and filter out the ultraviolet light of λ2 The results are shown in Table 1.

[0098] Table 1. p-n junction hollow sphere NiO-CdS solar visible light catalytic decomposition of water to produce H 2 result

[0099]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses preparation for p-n junction hollow sphere TiO-CdS nanophase compound material and application in photocatalytic hydrogen production by water decomposition; the method uses inexpensive cadmium source and nickel source, adopts a hydrothermal method, a synthesis method, and a four-step impregnation method for compounding an n-NiO semiconductor and a p-CdS semidconductor to prepare the p-n junction hollow sphere TiO-CdS nanophase compound material; and the technical process is simple and practicable and can realize scale production. The p-n junction hollow sphere TiO-CdS nanophase compound material is used as photocatalyst for solar energy visible light catalyzing hydrogen production by water decomposition, speeds up the conveying rate of photo-generated electrons and substantially increases yield of the hydrogen production.

Description

technical field [0001] The invention belongs to the preparation of nano composite material and its application in the field of new energy. Specifically relates to a preparation method of a p-n junction hollow sphere NiO-CdS nanocomposite material and the prepared p-n junction hollow sphere NiO-CdS nanocomposite material is used as a photocatalyst for solar visible light catalytic decomposition of water to produce hydrogen. Background technique [0002] In recent years, the greenhouse effect caused by energy shortage and the use of fossil energy has brought new challenges to the sustainable development of the global economy. Therefore, strengthening energy technology innovation and developing new energy sources not only affects the living environment of human beings today, but also concerns the future development of human beings. Developing clean energy, improving energy efficiency, promoting energy conservation and reducing emissions are becoming the common goals of all cou...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B01J27/04B01J23/755B01J37/10B01J37/02B01J35/08C01B3/04
CPCY02E60/364Y02E60/36Y02P20/133
Inventor 张耀君李学进闵超王亚超李圣
Owner XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com