Method for preparing diamond coatings by using SiC precursor method

A diamond coating and precursor technology, which is applied in the coating process and coating of metal materials, can solve the problems of low diamond coating preparation efficiency and poor adhesion performance, and achieve low cost, good consistency and compactness, fast effect

Inactive Publication Date: 2010-07-28
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to invent a method for preparing a diamond coating using SiC as a precursor for the p

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing diamond coatings by using SiC precursor method
  • Method for preparing diamond coatings by using SiC precursor method
  • Method for preparing diamond coatings by using SiC precursor method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0023] Example one.

[0024] figure 1 , 2 Shown.

[0025] A preparation method of SiC precursor diamond coating, which includes the following steps:

[0026] ①Substrate treatment: Choose one of high-speed steel, cemented carbide, cermet or ceramic as the substrate, and use emery polishing or sandblasting to treat the surface of the substrate to make the surface roughness 0.01≤Ra≤0.63 microns, Then, the surface of the substrate is decontaminated and cleaned, and finally the moisture on the surface of the substrate is dried with clean compressed air and then placed in an oven for drying;

[0027] ②Preparation of SiC coating: A method of physical vapor deposition, chemical vapor deposition or thermal spraying is used to deposit a uniform thickness and dense SiC coating on the surface of the substrate after pretreatment. The thickness of the SiC coating is controlled within 5-50μm ;

[0028] ③ SiC coating treatment: sandblasting the SiC coating surface with emery, the pressure of sandblas...

Example Embodiment

[0038] Example two.

[0039] The difference between this embodiment and the first embodiment is that SiC is directly used as the substrate, the substrate treatment and SiC deposition in the first embodiment can be omitted, and the third step can be directly started until the desired coating is obtained.

Example Embodiment

[0040] Example three.

[0041] Use YG6 cemented carbide turning tool as the substrate, use 240# emery paper to polish the surface of the substrate, and use the aqueous solution of sodium phosphate (30g / L) + OP emulsifier (2g / L) to apply to the substrate surface at 70℃ Ultrasonic decontamination treatment for 5 minutes, using deionized water to ultrasonically clean the surface of the YG6 carbide turning tool after decontamination treatment for 3 times. The turning tool is dried with clean compressed air on the surface water and then put in a 120℃ oven for baking 30 minutes. The chemical vapor deposition method is used to deposit a SiC coating with a thickness of 8 μm on the surface of the treated YG6 cemented carbide turning tool. The surface of the SiC coating is sandblasted with 180 mesh emery. The pressure of the sandblasted compressed air is 0.2Mpa. After sandblasting, the surface roughness of the SiC coating is Ra2 , H 2 As a transforming agent, the gas flow ratio of the tra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Granularityaaaaaaaaaa
Surface roughnessaaaaaaaaaa
Surface roughnessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for preparing diamond coatings by using a SiC precursor method, which is characterized by comprising the following steps of: (1) treatment of base materials, (2) preparation of the SiC coatings, (3) treatment of the SiC coatings, (4) preparation of diamond coatings and (5) aftertreatment of the diamond coatings, wherein the aftertreatment adopts reduced carbon in the mixed air of CH4 and H2 to fill and densify the diamond coatings transformed from SiC in vacuum; and the flow ratio CH4:H2 of the air for filling and densifying is 1:98-99, the air pressure of the mixed air of the CH4 and the H2 in a reaction chamber during densifying reaction is 3-5 kPa, the temperature of a heat source for heating is higher than 2200 DEG C, the temperature of a basal body is 780-820 DEG C, and the filling and densifying time is not less than 30 min. The invention has the advantages of simple method, low cost, high speed and good consistency and compactness of settled layers.

Description

technical field [0001] The invention relates to a method for preparing a coating, in particular to a method for preparing a superhard coating, in particular to a method for preparing a diamond coating by using SiC as a precursor. Background technique [0002] The ideal crystal structure of diamond makes it exhibit various superior physical and chemical properties. In the 20th century, human beings successively mastered high-temperature and high-pressure synthetic diamond technology and low-pressure synthetic diamond technology. The diamond synthesized by the high temperature and high pressure method is in the state of discrete single crystal grains, which are mainly used as abrasives and polycrystalline diamond raw materials. The diamond prepared by the low-pressure chemical vapor deposition method (Chemical Vapor Deposition referred to as CVD) is a monolithic diamond film. According to the thickness of the film, CVD diamond film is divided into two types: coating and thick...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C26/00
Inventor 卢文壮左敦稳朱良杰徐锋孙玉利刘扬朱伟军沈飞荣
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap