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Method for preparing diamond coatings by using SiC precursor method

A diamond coating and precursor technology, which is applied in the coating process and coating of metal materials, can solve the problems of low diamond coating preparation efficiency and poor adhesion performance, and achieve low cost, good consistency and compactness, fast effect

Inactive Publication Date: 2010-07-28
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to invent a method for preparing a diamond coating using SiC as a precursor for the poor adhesion between the CVD diamond coating and the substrate and the low production efficiency of the existing CVD diamond coating

Method used

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  • Method for preparing diamond coatings by using SiC precursor method
  • Method for preparing diamond coatings by using SiC precursor method
  • Method for preparing diamond coatings by using SiC precursor method

Examples

Experimental program
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Embodiment 1

[0024] figure 1 , 2 shown.

[0025] A preparation method of SiC precursor method diamond coating, it comprises the following steps:

[0026] ①Substrate treatment: Select one of high-speed steel, hard alloy, cermet or ceramic as the substrate, and use emery grinding or sandblasting to treat the surface of the substrate so that the surface roughness is 0.01≤Ra≤0.63 microns, Then decontaminate and clean the surface of the substrate, and finally dry the surface of the substrate with clean compressed air and put it in an oven for drying;

[0027] ② Preparation of SiC coating: use one of the methods of physical vapor deposition, chemical vapor deposition or thermal spraying to deposit a SiC coating with uniform thickness and dense structure on the surface of the pretreated substrate, and the thickness of the SiC coating is controlled at 5-50 μm ;

[0028] ③SiC coating treatment: use corundum to sandblast the surface of SiC coating, the pressure of sandblasting compressed air is ...

Embodiment 2

[0039] The difference between this embodiment and the first embodiment is that SiC is directly used as the substrate, which can save the substrate treatment and SiC deposition in the first embodiment, and can directly start from the third step until the desired coating is obtained.

Embodiment 3

[0041] Use YG6 cemented carbide turning tool as the substrate, use 240# emery paper to polish the surface of the substrate, and use an aqueous solution of sodium phosphate (30g / L) + OP emulsifier (2g / L) to polish the surface of the substrate at 70°C Ultrasonic decontamination for 5 minutes, using deionized water to ultrasonically clean the surface of the decontaminated YG6 cemented carbide turning tool for 3 times, drying the surface moisture with clean compressed air, and then putting it in an oven at 120°C for baking 30 minutes. A SiC coating with a thickness of 8 μm was deposited on the surface of the treated YG6 cemented carbide turning tool by chemical vapor deposition. The surface of the SiC coating is sandblasted with 180 mesh corundum, the pressure of the sandblasting compressed air is 0.2Mpa, the surface roughness of the SiC coating after sandblasting is Ra2 、H 2 is the conversion agent, and the gas flow ratio of the conversion agent is Cl 2 :H 2 =1:98 (also can be...

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Abstract

The invention relates to a method for preparing diamond coatings by using a SiC precursor method, which is characterized by comprising the following steps of: (1) treatment of base materials, (2) preparation of the SiC coatings, (3) treatment of the SiC coatings, (4) preparation of diamond coatings and (5) aftertreatment of the diamond coatings, wherein the aftertreatment adopts reduced carbon in the mixed air of CH4 and H2 to fill and densify the diamond coatings transformed from SiC in vacuum; and the flow ratio CH4:H2 of the air for filling and densifying is 1:98-99, the air pressure of the mixed air of the CH4 and the H2 in a reaction chamber during densifying reaction is 3-5 kPa, the temperature of a heat source for heating is higher than 2200 DEG C, the temperature of a basal body is 780-820 DEG C, and the filling and densifying time is not less than 30 min. The invention has the advantages of simple method, low cost, high speed and good consistency and compactness of settled layers.

Description

technical field [0001] The invention relates to a method for preparing a coating, in particular to a method for preparing a superhard coating, in particular to a method for preparing a diamond coating by using SiC as a precursor. Background technique [0002] The ideal crystal structure of diamond makes it exhibit various superior physical and chemical properties. In the 20th century, human beings successively mastered high-temperature and high-pressure synthetic diamond technology and low-pressure synthetic diamond technology. The diamond synthesized by the high temperature and high pressure method is in the state of discrete single crystal grains, which are mainly used as abrasives and polycrystalline diamond raw materials. The diamond prepared by the low-pressure chemical vapor deposition method (Chemical Vapor Deposition referred to as CVD) is a monolithic diamond film. According to the thickness of the film, CVD diamond film is divided into two types: coating and thick...

Claims

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Application Information

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IPC IPC(8): C23C26/00
Inventor 卢文壮左敦稳朱良杰徐锋孙玉利刘扬朱伟军沈飞荣
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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